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Chin. Phys. B, 2013, Vol. 22(7): 076103    DOI: 10.1088/1674-1056/22/7/076103
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Effect of Nano-SiO2 films on electron radiation induced conductivity of polyimide

Yue Long (岳龙), Wu Yi-Yong (吴宜勇), Sun Cheng-Yue (孙承月), Shi Ya-Ping (石亚平), Xiao Jing-Dong (肖景东), He Shi-Yu (何世禹)
School of Materials Science & Engineering, Harbin Institute of Technology, Harbin 150001, China
Abstract  The radiation induced conductivity (RIC) behaviors in nano-SiO2 deposited polyimide (PI) were investigated using in situ measurement technique. The results indicate that, by comparison with the case of virgin polyimide, the RIC in nano-SiO2/polyimide shows low steady state values. Moreover, the steady state RIC is a power function of the dose rate with a power index of 0.659, lower than that of 0.76 in the virgin polyimide. The interfacial barrier and trapping effects are the main reasons for the change. Meanwhile, both of the interfacial effects also result in a unipolar carrier transportation mechanism in nano-SiO2 deposited PI from the dipolar one in the virgin PI. The mechanisms of the RIC behaviors are discussed in the paper.
Keywords:  polyimide      radiation induced conductivity      Nano-SiO2  
Received:  03 January 2013      Revised:  05 March 2013      Accepted manuscript online: 
PACS:  61.80.Az (Theory and models of radiation effects)  
  61.82.-d (Radiation effects on specific materials)  
  78.70.-g (Interactions of particles and radiation with matter)  
  72.80.-r (Conductivity of specific materials)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51273052).
Corresponding Authors:  Wu Yi-Yong     E-mail:  wuyiyong2001@yahoo.com.cn

Cite this article: 

Yue Long (岳龙), Wu Yi-Yong (吴宜勇), Sun Cheng-Yue (孙承月), Shi Ya-Ping (石亚平), Xiao Jing-Dong (肖景东), He Shi-Yu (何世禹) Effect of Nano-SiO2 films on electron radiation induced conductivity of polyimide 2013 Chin. Phys. B 22 076103

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