Dual role of multiple-transistor charge sharing collection in single-event transient

doi:10.1088/1674-1056/22/4/046103

Abstract As technologies scale down in size, that multiple-transistors are affected by a single ion becomes a universal phenomenon, and some new effects are present in single event transients (SETs) due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal-oxide semiconductor field-effect transistor (PMOS FET), but also the on-state PMOS is struck by a heavy-ion in two-transistor inverter chain, due to the charge sharing collection and the electrical interaction, the SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by ion's striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in three-transistor inverter in depth, and the study illustrates that three-transistor inverter is still the better replacer for spaceborne integrated circuits design in the advanced technologies.

Keywords: multiple-transistor charge sharing collection single event transient (SET) pulse quenching effect radiation hardened by design (RHBD)

Received: 22 May 2012
Revised: 26 November 2012
Accepted manuscript online:

PACS:	61.80.Jh	(Ion radiation effects)
	85.30.Tv	(Field effect devices)
	85.30.Pq	(Bipolar transistors)

Fund: Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61133007) and the National Natural Science Foundation of China (Grant Nos. 61006070 and 61076025).

Corresponding Authors: Chen Jian-Jun
E-mail: cjj192000@163.com

Cite this article:

Guo Yang (郭阳), Chen Jian-Jun (陈建军), He Yi-Bai (何益百), Liang Bin (梁斌), Liu Bi-Wei (刘必慰) Dual role of multiple-transistor charge sharing collection in single-event transient 2013 Chin. Phys. B 22 046103

[1]	Dodd P E, Shaneyfelt M R, Schwank J R and Felix J A 2010 IEEE Trans. Nucl. Sci. 57 1747
[2]	ITRS http://www.itrs.net/Links/2011ITRS/Home2011.htm [2008-5-22]
[3]	Ahlbin J R, Gadlage M J, Atkinson N M, Bhuva B L, Witulski A F and Holman W T 2010 Proc. IRPS, Montreal, Canada, May 2-6, p. 198
[4]	Ahlbin J R, Gadlage M J, Atkinson N M, Narasimham B, Bhuva B L and Witulski A F 2011 IEEE Trans. Dev. Mater. Rel. 11 401
[5]	Hsiao-Heng K L, Klas L, Mounaim B, Ivan L and Umran I 2011 IEEE Trans. Nucl. Sci. 58 3016
[6]	Ahlbin J R, Massengill L W, Bhuva B L, Narasimham B, Gadlage M J and Eaton P H 2009 IEEE Trans. Nucl. Sci. 56 3050
[7]	Ahlbin J R, Gadlage M J, Ball D R, Witulski A W, Bhuva B L and Reed R A 2010 IEEE Trans. Nucl. Sci. 57 3380
[8]	Atkinson N M, Witulski A F and Holman W T 2011 IEEE Trans. Nucl. Sci. 58 885
[9]	Chen J J, Chen S M, Liang B, He Y B, Chi Y Q and Deng K F 2011 Chin. Phys. B 20 114220
[10]	Chen J J, Chen S M, Liang B and Deng K F 2012 Chin. Phys. B 21 016103
[11]	Liu F Y, Liu H Z, Liu B W, Liang B and Chen J J 2011 Acta Phys. Sin. 60 046106 (in Chinese)
[12]	Liu Z, Chen S M, Liang B, Liu B W and Zhao Z Y 2010 Acta Phys. Sin. 59 649 (in Chinese)
[13]	Chen J J, Chen S M, Liang B, Liu B W and Liu F Y 2012 Microelectron. Reliab. 52 1227
[14]	Chen J J, Chen S M, Liang B, Liu B W, Chi Y Q, Qin J R and He Y B 2011 Acta Phys. Sin. 60 086107 (in Chinese)
[15]	Amusan O A, Witulski A F, Massengill L W, Bhuva B L, Fleming P R and Alles M L 2006 IEEE Trans. Nucl. Sci. 53 3253
[16]	Chen S M and Chen J J 2012 Chin. Phys. B 21 016104
[17]	Chen S M, Liang B, Liu B W and Liu Z 2008 IEEE Trans. Nucl. Sci. 55 2914
[18]	Gadlage M J, Ahlbin J R, Narasimham B, Bhuva B L, Massengill L W and Schrimpf R D 2011 IEEE Trans. Dev. Mater. Rel. 11 179
[19]	Chen J J, Chen S M, Liang B and Liu B W 2012 IEEE Trans. Dev. Mater. Rel. 12 501
[20]	Chen J J, Chen S M, Liang B and Liu F Y 2012 Sci. China Ser. E 55 867

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Dual role of multiple-transistor charge sharing collection in single-event transient

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