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Chin. Phys. B, 2013, Vol. 22(4): 047202    DOI: 10.1088/1674-1056/22/4/047202
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Spin-polarized injection into p-type GaAs layer from a Co2MnAl injector

Yuan Si-Peng (袁思芃), Shen Chao (申超), Zheng Hou-Zhi (郑厚植), Liu Qi (刘奇), Wang Li-Guo (王丽国), Meng Kang-Kang (孟康康), Zhao Jian-Hua (赵建华)
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  Electric luminescence and its circular polarization in a Co2MnAl injector-based light emitting diode (LED) has been detected at the transition of e-AC0, where injected spin-polarized electrons recombine with bound holes at carbon acceptors. A spin polarization degree of 24.6% is obtained at 77 K after spin-polarized electrons traverse a distance of 300 nm before they recombine with holes bound at neutral carbon acceptors in a p+-GaAs layer. The large volume of the p+-GaAs layer can facilitate the detection of weak electric luminescence (EL) from e-AC0 emission without being quenched at higher bias as in quantum wells. Moreover, unlike the interband electric luminescence in the p+-GaAs layer, where the spin polarization of injected electrons is destroyed by very effective electron-hole exchange scattering (BAP mechanism), the spin polarization of injected electrons seems to survive during their recombination with holes bound at carbon acceptors.
Keywords:  spin injection      Co2MnAl Heusler alloy      electric luminescence  
Received:  13 August 2012      Revised:  12 October 2012      Accepted manuscript online: 
PACS:  72.25.Mk (Spin transport through interfaces)  
  75.50.Cc (Other ferromagnetic metals and alloys)  
  78.60.Fi (Electroluminescence)  
Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CB932901) and the National Natural Science Foundation of China (Grant No. 60836002).
Corresponding Authors:  Zheng Hou-Zhi     E-mail:  hzzheng@red.semi.ac.cn

Cite this article: 

Yuan Si-Peng (袁思芃), Shen Chao (申超), Zheng Hou-Zhi (郑厚植), Liu Qi (刘奇), Wang Li-Guo (王丽国), Meng Kang-Kang (孟康康), Zhao Jian-Hua (赵建华) Spin-polarized injection into p-type GaAs layer from a Co2MnAl injector 2013 Chin. Phys. B 22 047202

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