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Spin-polarized injection into p-type GaAs layer from a Co2MnAl injector |
Yuan Si-Peng (袁思芃), Shen Chao (申超), Zheng Hou-Zhi (郑厚植), Liu Qi (刘奇), Wang Li-Guo (王丽国), Meng Kang-Kang (孟康康), Zhao Jian-Hua (赵建华) |
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract Electric luminescence and its circular polarization in a Co2MnAl injector-based light emitting diode (LED) has been detected at the transition of e-AC0, where injected spin-polarized electrons recombine with bound holes at carbon acceptors. A spin polarization degree of 24.6% is obtained at 77 K after spin-polarized electrons traverse a distance of 300 nm before they recombine with holes bound at neutral carbon acceptors in a p+-GaAs layer. The large volume of the p+-GaAs layer can facilitate the detection of weak electric luminescence (EL) from e-AC0 emission without being quenched at higher bias as in quantum wells. Moreover, unlike the interband electric luminescence in the p+-GaAs layer, where the spin polarization of injected electrons is destroyed by very effective electron-hole exchange scattering (BAP mechanism), the spin polarization of injected electrons seems to survive during their recombination with holes bound at carbon acceptors.
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Received: 13 August 2012
Revised: 12 October 2012
Accepted manuscript online:
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PACS:
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72.25.Mk
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(Spin transport through interfaces)
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75.50.Cc
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(Other ferromagnetic metals and alloys)
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78.60.Fi
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(Electroluminescence)
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Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CB932901) and the National Natural Science Foundation of China (Grant No. 60836002). |
Corresponding Authors:
Zheng Hou-Zhi
E-mail: hzzheng@red.semi.ac.cn
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Cite this article:
Yuan Si-Peng (袁思芃), Shen Chao (申超), Zheng Hou-Zhi (郑厚植), Liu Qi (刘奇), Wang Li-Guo (王丽国), Meng Kang-Kang (孟康康), Zhao Jian-Hua (赵建华) Spin-polarized injection into p-type GaAs layer from a Co2MnAl injector 2013 Chin. Phys. B 22 047202
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