Sunlight loss for femtosecond microstructured silicon with two impurity bands

doi:10.1088/1674-1056/20/7/074202

Abstract Black silicon, produced by irradiating the surface of a silicon wafer with femtosecond laser pulses in the presence of a sulfur-bearing gas, is widely believed to be a potential material for efficient multi-intermediate-band silicon solar cells. Taking chalcogen as an example, we analyse the loss of sunlight for silicon with two impurity bands and we find that loss of the sunlight can be minimized to 0.332 when Te⁰(0.307 eV) and Te⁺(0.411 eV) are doped into microstructured silicon. Finally, problems needed to be resolved in analysing the relationship between conversion efficiency of the ideal four-band silicon solar cell and the position of the introduced two intermediated bands in silicon according to detailed balance theory are pointed out with great asis.

Keywords: black silicon solar cell with impurity bands loss of sunlight

Received: 12 January 2011
Revised: 11 March 2011
Accepted manuscript online:

PACS:	42.25.Bs	(Wave propagation, transmission and absorption)
	42.55.-f	(Lasers)

Cite this article:

Fang Jian(方健), Chen Chang-Shui(陈长水), Wang Fang(王芳), and Liu Song-Hao(刘颂豪) Sunlight loss for femtosecond microstructured silicon with two impurity bands 2011 Chin. Phys. B 20 074202

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Sunlight loss for femtosecond microstructured silicon with two impurity bands

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