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Chin. Phys. B, 2010, Vol. 19(9): 097202    DOI: 10.1088/1674-1056/19/9/097202
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

A new model for electromigration grain boundary noise based on free volume

He Liang(何亮)a)†, Du Lei(杜磊)a), Zhuang Yi-Qi(庄奕琪)b), Chen Hua(陈华)a), Chen Wen-Hao(陈文豪)a), Li Wei-Hua(李伟华)a), and Sun Peng(孙鹏)a)
a School of Technical Physics, Xidian University, Xi'an 710071, China; b School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  Grain boundary plays a key role in electromigration process of polycrystal interconnection. We take a free volume to represent a 'vacancy–ion complex' as a function of grain boundary specific resistivity, and develop a new characterisation model for grain boundary noise. This model reveals the internal relation between the boundary scattering section and electromigration noise. Comparing the simulation result with our experimental result, we find the source as well as the form of noise change in the electromigration process. In order to describe the noise enhancement at grain boundary quantitatively, we propose a new parameter——grain boundary noise enhancement factor, which reflects that the grain boundary noise can characterise the electromigration damage sensitively.
Keywords:  free volume      electromigration      grain boundary noise  
Received:  15 January 2010      Revised:  01 April 2010      Accepted manuscript online: 
PACS:  7270  
  6630Q  
  6170N  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60376023) and the Innovative Foundation of Xi'an Applied Materials Inc. China (Grant No. XA-AM-200603).

Cite this article: 

He Liang(何亮), Du Lei(杜磊), Zhuang Yi-Qi(庄奕琪), Chen Hua(陈华), Chen Wen-Hao(陈文豪), Li Wei-Hua(李伟华), and Sun Peng(孙鹏) A new model for electromigration grain boundary noise based on free volume 2010 Chin. Phys. B 19 097202

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