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A new model for electromigration grain boundary noise based on free volume |
He Liang(何亮)a)†, Du Lei(杜磊)a), Zhuang Yi-Qi(庄奕琪)b), Chen Hua(陈华)a), Chen Wen-Hao(陈文豪)a), Li Wei-Hua(李伟华)a), and Sun Peng(孙鹏)a) |
a School of Technical Physics, Xidian University, Xi'an 710071, China; b School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract Grain boundary plays a key role in electromigration process of polycrystal interconnection. We take a free volume to represent a 'vacancy–ion complex' as a function of grain boundary specific resistivity, and develop a new characterisation model for grain boundary noise. This model reveals the internal relation between the boundary scattering section and electromigration noise. Comparing the simulation result with our experimental result, we find the source as well as the form of noise change in the electromigration process. In order to describe the noise enhancement at grain boundary quantitatively, we propose a new parameter——grain boundary noise enhancement factor, which reflects that the grain boundary noise can characterise the electromigration damage sensitively.
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Received: 15 January 2010
Revised: 01 April 2010
Accepted manuscript online:
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60376023) and the Innovative Foundation of Xi'an Applied Materials Inc. China (Grant No. XA-AM-200603). |
Cite this article:
He Liang(何亮), Du Lei(杜磊), Zhuang Yi-Qi(庄奕琪), Chen Hua(陈华), Chen Wen-Hao(陈文豪), Li Wei-Hua(李伟华), and Sun Peng(孙鹏) A new model for electromigration grain boundary noise based on free volume 2010 Chin. Phys. B 19 097202
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