Design of novel three port optical gates scheme for the integration of large optical cavity electroabsorption modulators and evanescently-coupled photodiodes
Liao Zai-Yi(廖栽宜)†, Yang Hua(杨华), and Wang Wei(王圩)
State Key Laboratory on Integrated Optoelectronics and Key Laboratory of Semiconductors Materials of Chinese Academy of Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract This paper presents a novel scheme to monolithically integrate an evanescently-coupled uni-travelling carrier photodiode with a planar short multimode waveguide structure and a large optical cavity electroabsorption modulator based on a multimode waveguide structure. By simulation, both electroabsorption modulator and photodiode show excellent optical performances. The device can be fabricated with conventional photolithography, reactive ion etching, and chemical wet etching.
Received: 21 August 2007
Revised: 07 January 2008
Accepted manuscript online:
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 90401025) and the
National 973 project (Grant No 2006CB604901).
Cite this article:
Liao Zai-Yi(廖栽宜), Yang Hua(杨华), and Wang Wei(王圩) Design of novel three port optical gates scheme for the integration of large optical cavity electroabsorption modulators and evanescently-coupled photodiodes 2008 Chin. Phys. B 17 2557
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