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Chinese Physics, 2004, Vol. 13(11): 1962-1964    DOI: 10.1088/1009-1963/13/11/036
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Thermally-assisted tunnelling of magnetization in (Mn0.96Cr0.04)12-ac

He Lun-Hua (何伦华)ab, Cao Hui-Bo (曹慧波)b, Wang Fang-Wei (王芳卫)b
a Department of Physics, Fudan University, Shanghai 200433, China; b State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
Abstract  The thermally assisted resonant tunnelling in a single crystal (Mn$_{0.96}$Cr$_{0.04}$)12-ac is studied in this paper. The obtained hysteresis loops at seven different temperatures between 1.8 and 3K show obvious dependence on temperature. The magnetization steps occur at specific field values of $nH_{\rm R}$ with $H_{\rm R}$≈0.46T, which are approximately independent of the temperature. As the temperature decreases, the area enclosed in the hysteresis loops and the actual number n of the resonances increase, which provides clear evidence of thermally assisted resonant tunnelling in (Mn$_{0.96}$Cr$_{0.04}$)12-ac.
Keywords:  quantum tunnelling      thermally assisted resonant tunnelling  
Received:  09 May 2004      Revised:  03 June 2004      Accepted manuscript online: 
PACS:  73.40.Gk (Tunneling)  
  75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects)  
  03.65.Xp (Tunneling, traversal time, quantum Zeno dynamics)  

Cite this article: 

He Lun-Hua (何伦华), Cao Hui-Bo (曹慧波), Wang Fang-Wei (王芳卫) Thermally-assisted tunnelling of magnetization in (Mn0.96Cr0.04)12-ac 2004 Chinese Physics 13 1962

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