DESIGN OF A 532nm Nd:YVO4/KTP SINGLE-FREQUENCY LASER
Xu Chun-lin (徐春林)a, Shen Nai-cheng (沈乃澂)b, Zang Er-jun (臧二军)b, Sun Yi-min (孙义民)b, Lu Hai-ning (鲁海宁)b, Zhao Kun (赵昆)b, Zhang Xue-bin (张学斌)b
a Institute of Microelectronics, Tsinghua University, Beijing 100084, China; b The Joint Laboratory of Advanced Technology in Measurements, Beijing 100013, China
Abstract A model of the laser-diode pumped solid-state laser is developed to deduce the minimum average radii of the pump beam in the solid medium, since the smaller the cavity waist, the higher the laser output power is expected to be. With an appropriate coupling system consisting of the collimating lens, prism pair and focusing lens, a diode-pumped single-frequency Nd:YVO4/KTP intracavity frequency-doubling cw laser has been demonstrated through the precise temperature control of the Nd:YVO4 crystal, the KTP crystal and the diode laser. The 532nm single-frequency output power of 40.4mW (in fact 55mW if the reflection loss of the triangular prism is taken into account) is obtained for an incident power of 515mW. It is derived theoretically and is verified in experiment that the frequency drift of the free-running laser can be reduced by increasing the cavity length.
Received: 08 October 2000
Revised: 21 March 2001
Accepted manuscript online:
PACS:
42.55.Rz
(Doped-insulator lasers and other solid state lasers)
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