INTERACTION OF OXYGEN PRECIPITATES WITH STRUCTURAL DEFECTS IN CZ Si CRYSTALS
LUAN HONG-FA (栾洪发)a, ZHANG JUN (张隽)b, XIAO ZHI-GANG (肖治刚)c, KE JUN (柯俊)c
a Institute of Microelectronics, Tsinghua University, Beijing 100084, China ; b Institute of Semiconductor, Academia Sinica Beijing 100083, China; c Department of Materials Physics, Beijing University of Science and Technology, Beijing 100083, China
Abstract This paper ia dealing with the interaction between oxygen precipitates and structural defects in CZ Si crystals. Different lattice defects: dislocation loops, rod-like defects and stacking faults have been observed as a consequence of oxygen precipitation. In turn, these defects also promote the nucleation and growth of the oxygen precipitates. It is shown that the dislocation dipole is more efficient than single dislocation in enhancing the oxygen precipitate formation.
Received: 09 February 1994
Accepted manuscript online:
LUAN HONG-FA (栾洪发), ZHANG JUN (张隽), XIAO ZHI-GANG (肖治刚), KE JUN (柯俊), INTERACTION OF OXYGEN PRECIPITATES WITH STRUCTURAL DEFECTS IN CZ Si CRYSTALS 1995 Acta Physica Sinica (Overseas Edition) 4 213
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