| ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS |
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Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron-hole bilayer |
| Xue-Ke Wang(王雪珂)1, Ya-Bin Sun(孙亚宾)1,†, Zi-Yu Liu(刘子玉)2,‡, Yun Liu(刘赟)1, Xiao-Jin Li(李小进)1, and Yan-Ling Shi(石艳玲)1 |
1 Department of Electrical Engineering, East China Normal University, Shanghai 200241, China;
2 School of Microelectronics, Fudan University, Shanghai 200433, China |
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Abstract The single event transient (SET) effect in nanotube tunneling field-effect transistor with bias-induced electron-hole bilayer (EHBNT-TFET) is investigated by 3-D TCAD simulation for the first time. The effects of linear energy transfer (LET), characteristic radius, strike angle, electrode bias and hit location on SET response are evaluated in detail. The simulation results show that the peak value of transient drain current is up to 0.08 mA for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 MeV·cm2/mg, which is much higher than the on-state current of EHBNT-TFET. The SET response of EHBNT-TFET presents an obvious dependence on LET, strike angle, drain bias and hit location. As LET increases from 2 MeV·cm2/mg to 10 MeV·cm2/mg, the peak drain current increases monotonically from 0.015 mA to 0.08 mA. The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius. The peak drain current and collected charge increase by 0.014 mA and 0.06 fC, respectively, as the drain bias increases from 0.1 V to 0.9 V. Whether from the horizontal or the vertical direction, the most sensitive hit location is related to wt. The underlying physical mechanism is explored and discussed.
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Received: 25 April 2022
Revised: 06 September 2022
Accepted manuscript online: 13 September 2022
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PACS:
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42.88.+h
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(Environmental and radiation effects on optical elements, devices, and systems)
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85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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| Fund: Project supported in part by the National Natural Science Foundation of China (Grant No. 61974056), the Natural Science Foundation of Shanghai (Grant No. 19ZR1471300), Shanghai Science and Technology Innovation Action Plan (Grant No. 19511131900), and Shanghai Science and Technology Explorer Plan (Grant No. 21TS1401700). |
Corresponding Authors:
Ya-Bin Sun, Zi-Yu Liu
E-mail: ybsun@ee.ecnu.edu.cn;liuziyu@fudan.edu.cn
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Cite this article:
Xue-Ke Wang(王雪珂), Ya-Bin Sun(孙亚宾), Zi-Yu Liu(刘子玉), Yun Liu(刘赟), Xiao-Jin Li(李小进), and Yan-Ling Shi(石艳玲) Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron-hole bilayer 2023 Chin. Phys. B 32 064209
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