Deposition of Cu seed layer film by supercritical fluid deposition for advanced interconnects

doi:10.1088/1674-1056/22/6/064217

Abstract The deposition of a Cu seed layer film is investigated by supercritical fluid deposition (SCFD) using H₂ as a reducing agent for Bis(2,2,6,6-tetramethyl-3,5- heptanedionato) copper in supercritical CO₂ (scCO₂). The effects of deposition temperature, precursor, and H₂ concentration are investigated to optimize Cu deposition. Continuous metallic Cu films are deposited on Ru substrates at 190 ℃ when a 0.002 mol/L Cu precursor is introduced with 0.75 mol/L H₂. A Cu precursor concentration higher than 0.002 mol/L is found to have negative effects on the surface qualities of Cu films. For a H₂ concentration above 0.56 mol/L, the root-mean-square (RMS) roughness of a Cu film decreases as the H₂ concentration increases. Finally, a 20-nm thick Cu film with a smooth surface, which is required as a seed layer in advanced interconnects, is successfully deposited at a high H₂ concentration (0.75 mol/L).

Keywords: supercritical CO₂ Cu film seed layer Cu interconnects

Received: 03 September 2012
Revised: 10 October 2012
Accepted manuscript online:

PACS:	42.82.Ds	(Interconnects, including holographic interconnects)
	68.35.bd	(Metals and alloys)
	68.55.A-	(Nucleation and growth)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 50901086 and 51072118), the Shanghai Shuguang Project, China (Grant No. 09SG46), the Science Foundation for the Excellent Youth Scholars of Shanghai Municipal Education Commission, China (Grant No. slg10032), the Qianjiang Project of Zhejiang Province, China (Grant No. 2010R10047), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry.

Corresponding Authors: Zhao Bin, Yang Jun-He
E-mail: zhaobin@usst.edu.cn; jhyang@usst.edu.cn

Cite this article:

Zhao Bin (赵斌), Zhao Ming-Tao (赵明涛), Zhang Yan-Fei (张艳飞), Yang Jun-He (杨俊和) Deposition of Cu seed layer film by supercritical fluid deposition for advanced interconnects 2013 Chin. Phys. B 22 064217

[1]	Rosenberg R, Edelstein D C, Hu C K and Rodbell K P 2000 Ann. Rev. Mater. Sci. 30 229
[2]	Tu K N 2003 J. Appl. Phys. 94 5451
[3]	Li B Z, Sullivan T D, Lee T C and Badami D 2004 Microelectron. Reliab. 44 365
[4]	ITRS, International Technology Roadmap for Semiconductors 2005 edition
[5]	Blackburn J M, Long D P, Cabanas A and Watkins J J 2001 Science 294 141
[6]	Uchida H, Sekino K, Hayakawa Y and Koda S 2012 J. Supercrit. Fluid 66 59
[7]	Karanikas C F and Watkins J J 2010 Microelectron. Eng. 87 566
[8]	Romang A H and Watkins J J 2010 Chem. Rev. 110 459
[9]	Cabanas A, Long P and Watkins J J 2004 Chem. Mater. 16 2028
[10]	Zhao B, Momose T, Ohkubo T and Shimogaki Y 2008 Microelectron. Eng. 85 675
[11]	Wang Y L, Zhang Z W, Li B and Jiang B 2011 Acta Phys. Sin. 60 088103 (in Chinese)
[12]	Kondoh E 2005 Jpn. J. Appl. Phys. 44 5799
[13]	Hunde E T and Watkins J J 2004 Chem. Mater. 16 498
[14]	Zhao B, Momose T and Shimogaki Y 2006 Jpn. J. Appl. Phys. 45 L1296
[15]	Qu X P, Tan J J, Zhou M, Chen, T, Xie Q, Ru G P and Li B Z 2006 Appl. Phys. Lett. 88 151912
[16]	Momose T, Sugiyama M and Shimogaki Y 2008 Jpn. J. Appl. Phys. 47 885
[17]	Blackburn J M, Long D P and Watkins J J 2000 Chem. Mater. 12 2625

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Deposition of Cu seed layer film by supercritical fluid deposition for advanced interconnects

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