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Chin. Phys. B, 2013, Vol. 22(5): 057802    DOI: 10.1088/1674-1056/22/5/057802
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Electronic Raman scattering in double semi-parabolic quantum wells

N. Zamani, A. Keshavarz, M. J. Karimi
Department of Physics, College of Sciences, Shiraz University of Technology, Shiraz, Iran, P.O. Box 313-71555, Shiraz, Iran
Abstract  The differential cross-section for electronic Raman scattering in double semi-parabolic quantum wells of typical GaAs/AlxGa1-xAs is investigated numerically with the effective-mass approximation. The dependence of the differential cross-section on structural parameters such as the barrier width and the well widths are studied. Our results indicate that the electronic Raman scattering is affected by the geometrical size and can be negligible in the symmetric double-well case.
Keywords:  electronic Raman scattering      double semi-parabolic quantum wells  
Received:  08 October 2012      Revised:  26 November 2012      Accepted manuscript online: 
PACS:  78.30.-j (Infrared and Raman spectra)  
  78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)  
  78.67.Ch (Nanotubes)  
  78.20.Bh (Theory, models, and numerical simulation)  
Fund: Project supported by the Shiraz University of Technology, Iran.
Corresponding Authors:  A. Keshavarz     E-mail:  Keshavarz@sutech.ac.ir

Cite this article: 

N. Zamani, A. Keshavarz, M. J. Karimi Electronic Raman scattering in double semi-parabolic quantum wells 2013 Chin. Phys. B 22 057802

[1] Karabulut I and Baskoutas S 2008 J. Appl. Phys. 103 073512
[2] Liu C H and Xu B R 2008 Phys. Lett. A 372 888
[3] Park S H and Hong W P 2010 Chin. Phys. Lett. 27 098502
[4] Zhu J H, Wang L J, Zhang S M, Wang H, Zhao D G, Zhu J J, Liu Z S, Jiang D S and Yang H 2011 Chin. Phys. B 20 077804
[5] Wang Y B, Xu Y, Yu Z, Yu X, Song G F and Chen L H 2011 Chin. Phys. B 20 067302
[6] Xu P S, Xie C K, Pan H B and Xu F Q 2004 Chin. Phys. Soc. 13 2126
[7] Gue D S and Liu B G 2012 Chin. Phys. B 21 017101
[8] Peter J A and Lee C W 2012 Chin. Phys. B 21 087302
[9] Hong W P and Park S H 2011 Chin. Phys. B 20 098502
[10] Maung S M and Katayama S 2004 Physica E 21 774
[11] Miura M and Katayama S 2006 Sci. Tech. Adv. Mater. 7 286
[12] Faist J, Capasso F, Sivco D L, Sirtori C, Hutchinson A L and Cho A Y 1994 Science 264 553
[13] Ohno Y, Matsusue T and Sakaki H 1993 Appl. Phys. Lett. 62 1952 4
[14] Leo K, Shah J, Göbel E O G, Gordon J P and Schmitt-Rink S 1992 Semicond. Sci. Technol 7 B394
[15] Liu L, Swierkowski L, Neilson D and Szymaiski J 1996 Phys. Rev. B 53 7923
[16] Cardona M and Guntherodt G 1989 Light Scattering in Solids V (Topics in Applied Physics Vol. 66) (Heidelberg: Springer)
[17] Comas F, Trallero-Giner C and Perez-Alvarez R J 1986 J. Phys. C: Solid State Phys. 19 6479
[18] Cardona M 1990 Superlatt. Microstruct. 7 183
[19] Clein M V 1986 IEEE J. Quantum Electron. 22 1760
[20] Pinczuk A and Burstein 1983 Light Scattering in Solid I Vol. 8 (Heidelberg: Springer)
[21] Zhao X F and Liu C H 2007 Physica E 36 34
[22] Lu F and Liu C H 2011 Superlatt. Microstruct. 50 582
[23] Betancourt-Riera R, Riera R and Rosas R 2012 Physica E 44 1152
[24] Liu C H, Ma B K and Chen C Y 2002 Chin. Phys. Soc. 11 0730
[25] Liang S J, Xie W F and Lu L L 2011 Physica B 406 652
[26] Xie W F 2012 Phys. Lett. A 376 1657
[27] Verdeyen J T 1995 Laser Electronics (3rd edn.) (New Jersey: Prentice-Hall) 475
[28] Keshavarz A and Karimi M J 2010 Phys. Lett. A 374 2675
[29] Khurgin J B, Sun G, Friedman L R and Soref R A 1995 J. Appl. Phys. 78 7398
[30] Sun G, Khurgin J B, Friedman L R and Soref R A 1998 J. Opt. Soc. Am. B 15 648
[31] Comas F, Trallero Giner C and Perez-Alvarez R 1986 J. Phys. C: Solid State Phys. 19 6479
[32] Riera R, Comas F, Trallero-Giner C and Pavlov S T 1988 Phys. Status. Solidi. b 148 533
[33] Betancourt-Riera R, Riera R, Rosas R and Marín J L 2003 Phys. Low-Dimens. Struct 1-2 125
[34] Bergues J M, Riera R, Comas F and Trallero-Giner C 1995 J. Phys.: Condens. Matter 7 7273
[35] Bergues J M, Betancourt-Rier R, Rosas R and Marín J L 2000 J. Phys.: Condens. Matter 12 7983
[36] Riera R, Marín J L and Rosas R 2001 Optical Properties and Impurity States in Nanostructured Materials (Handbook of Advanced Electronic and Photonic Devices Vol. 6) (New York: Academic) Chap. 6
[37] Betancourt-Riera R, Rosas R , Marín-Enriquez I, Riera R and Marín J L 2005 J. Phys.: Condens. Matter 17 4451
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