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Chin. Phys. B, 2011, Vol. 20(4): 047504    DOI: 10.1088/1674-1056/20/4/047504
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

Zhang Zheng-Zhong(张正中)a), Shen Rui(沈瑞)a),Sheng Li(盛利)a), Wang Rui-Qiang(王瑞强)b),Wang Bai-Gen(王伯根)a),and Xing Ding-Yu(邢定钰) a)
a National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;  Laboratory of Quantum Information Technology, ICMP and SPTE, South China Normal University, Guangzhou 510006, China
Abstract  A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.
Keywords:  molecular magnets      spin polarized transport      single-electron tunneling  
Received:  28 December 2010      Revised:  14 January 2011      Accepted manuscript online: 
PACS:  75.50.Xx (Molecular magnets)  
  72.25.-b (Spin polarized transport)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60825402, 60421003, 11074111 and 10974058) and the State Key Program for Basic Research of China (Grant Nos. 2011CB922103, 2009CB929504 and 2011CBA00205).

Cite this article: 

Zhang Zheng-Zhong(张正中), Shen Rui(沈瑞), Sheng Li(盛利), Wang Rui-Qiang(王瑞强), Wang Bai-Gen(王伯根), and Xing Ding-Yu(邢定钰) All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions 2011 Chin. Phys. B 20 047504

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