Synthesis and electrical characterization of tungsten oxide nanowires
Huang Rui(黄睿), Zhu Jing(朱静)†, and Yu Rong(于荣)
Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Abstract Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour--solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W18O49. I--V curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the I--V curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I--V curves by using a metal--semiconductor--metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.
Received: 24 November 2008
Revised: 16 December 2008
Accepted manuscript online:
PACS:
81.16.-c
(Methods of micro- and nanofabrication and processing)
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