The influence of the Dresselhaus spin--orbit coupling on the tunnelling magnetoresistance in ferromagnet/ insulator /semiconductor/ insulator /ferromagnet tunnel junctions
Wang Xiao-Hua(王晓华)a), An Xing-Tao(安兴涛)a), and Liu Jian-Jun(刘建军)a)b)†
a College of Physical Science and Information Engineering, Hebei Normal University, Shijiazhuang 050016, China; b Hebei Advanced Thin Films Laboratory, Shijiazhuang 050016, China
Abstract This paper investigates the effect of Dresselhaus spin--orbit coupling on the spin-transport properties of ferromagnet/insulator/semiconductor/insulator/ferromagnet double-barrier structures. The influence of the thickness of the insulator between the ferromagnet and the semiconductor on the polarization is also considered. The obtained results indicate that (i) the polarization can be enhanced by reducing the insulator layers at zero temperature, and (ii) the tunnelling magnetoresistance inversion can be illustrated by the influence of the Dresselhaus spin--orbit coupling effect in the double-barrier structure. Due to the Dresselhaus spin--orbit coupling effect, the tunnelling magnetoresistance inversion occurs when the energy of a localized state in the barrier matches the Fermi energy EF of the ferromagnetic electrodes.
Received: 13 October 2008
Revised: 21 October 2008
Accepted manuscript online:
PACS:
71.70.Ej
(Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)
(Magnetic properties of interfaces (multilayers, superlattices, heterostructures))
Fund: Project
supported by the National Natural Science Foundation of China (Grant
No 10674040) and the Specialized Research Fund for the Doctoral
Program of Higher Education of China (Grant No 20060094002).
Cite this article:
Wang Xiao-Hua(王晓华), An Xing-Tao(安兴涛), and Liu Jian-Jun(刘建军) The influence of the Dresselhaus spin--orbit coupling on the tunnelling magnetoresistance in ferromagnet/ insulator /semiconductor/ insulator /ferromagnet tunnel junctions 2009 Chin. Phys. B 18 749
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