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Chin. Phys. B, 2008, Vol. 17(5): 1869-1873    DOI: 10.1088/1674-1056/17/5/054
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Quantum mechanical effects on heat generation in nano-scale MOSFETs

Ji Min(吉敏), Zhao Kai(赵凯), Du Gang(杜刚), Kang Jin-Feng(康晋锋), Han Ru-Qi(韩汝琦), and Liu Xiao-Yan(刘晓彦)
Institute of Microelectronics, Peking University, Beijing 100871, China
Abstract  The Monte Carlo simulation is performed to investigate the quantum mechanical (QM) effects on heat generation in nano-scale metal oxide semiconductor field effect transistors (MOSFETs) by solving the quantum Boltzmann equation. The influence of QM effects both in real space and $K$ space on the heat generation is investigated.
Keywords:  heat generation      quantum potential      collision broadening  
Received:  02 August 2007      Revised:  12 November 2007      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  73.40.Gk (Tunneling)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
Fund: Project supported by the National Key Basic Research Program of China (Grant No 2006CB302705) and the National Natural Science Foundation of China (Grant No 60776068).

Cite this article: 

Ji Min(吉敏), Zhao Kai(赵凯), Du Gang(杜刚), Kang Jin-Feng(康晋锋), Han Ru-Qi(韩汝琦), and Liu Xiao-Yan(刘晓彦) Quantum mechanical effects on heat generation in nano-scale MOSFETs 2008 Chin. Phys. B 17 1869

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