Abstract This paper analyses the reverse recovery characteristics and mechanism of SiGeC p-i-n diodes. Based on the integrated systems engineering (ISE) data, the critical physical models of SiGeC diodes are proposed. Based on heterojunction band gap engineering, the softness factor increases over six times, reverse recovery time is over 30% short and there is a 20% decrease in peak reverse recovery current for SiGeC diodes with 20% of germanium and 0.5% of carbon, compared to Si diodes. Those advantages of SiGeC p-i-n diodes are more obvious at high temperature. Compared to lifetime control, SiGeC technique is more suitable for improving diode properties and the tradeoff between reverse recovery time and forward voltage drop can be easily achieved in SiGeC diodes. Furthermore, the high thermal-stability of SiGeC diodes reduces the costs of further process steps and offers more freedoms to device design.
Received: 10 June 2008
Revised: 23 June 2008
Accepted manuscript online:
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 50477012), the
Foundation of Excellent Doctoral Dissertation of Xi'an University of
Technology and the Specialized Research Fund for the Doctoral
Program of Higher Education o
Cite this article:
Gao Yong (高勇), Liu Jing (刘静), Yang Yuan (杨媛) Research on reverse recovery characteristics of SiGeC p-i-n diodes 2008 Chin. Phys. B 17 4635
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