Preparation of hydrogenated microcrystalline silicon films with hot-wire-assisted MWECR-CVD system
He Bin (何斌)a, Chen Guang-Hua (陈光华)a, Zhu Xiu-Hong (朱秀红)a, Zhang Wen-Li (张文理)a, Ding Yi (丁毅)b, Ma Zhan-Jie (马占杰)a, Gao Zhi-Hua (郜志华)a, Song Xue-Mei (宋雪梅)a, Deng Jin-Xiang (邓金祥)c
a College of Material Science and Engineering, Beijing University of Technology, Beijing 100022, China; b School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; c College of Applied Science, Beijing University of Technology,Beijing 100022, China
Abstract Intrinsic hydrogenated microcrystalline silicon ($\mu$c-Si:H) films have been prepared by hot-wire-assisted microwave electron-cyclotron-resonance chemical vapour deposition (HW-MWECR-CVD) under different deposition conditions. Fourier-transform infrared spectra and Raman spectra were measured. Optical band gap was determined by Tauc plots, and experiments of photo-induced degradation were performed. It was observed that hydrogen dilution plays a more essential role than substrate temperature in microcrystalline transformation at low temperatures. Crystalline volume fraction and mean grain size in the films increase with the dilution ratio (R=H2/(H2+SiH4)). With the rise of crystallinity in the films, the optical band gap tends to become narrower while the hydrogen content and photo-induced degradation decrease dramatically. The samples, were identified as $\mu$c-Si:H films, by calculating the optical band gap. It is considered that hydrogen dilution has an effect on reducing the crystallization activation energy of the material, which promotes the heterogeneous solid-state phase transition characterized by the Johnson--Mehl--Avrami (JMA) equation. The films with the needed structure can be prepared by balancing deposition and crystallization through controlling process parameters.
Received: 23 August 2005
Revised: 19 January 2006
Accepted manuscript online:
Fund: Project supported by the State Key Development Program for Basic Research of China (Grant No G2000028201-1).
Cite this article:
He Bin (何斌), Chen Guang-Hua (陈光华), Zhu Xiu-Hong (朱秀红), Zhang Wen-Li (张文理), Ding Yi (丁毅), Ma Zhan-Jie (马占杰), Gao Zhi-Hua (郜志华), Song Xue-Mei (宋雪梅), Deng Jin-Xiang (邓金祥) Preparation of hydrogenated microcrystalline silicon films with hot-wire-assisted MWECR-CVD system 2006 Chinese Physics 15 866
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