Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench

doi:10.1088/1674-1056/ac29ac

中国物理B ›› 2022, Vol. 31 ›› Issue (4): 47304-047304.doi: 10.1088/1674-1056/ac29ac

Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench

Chunzao Wang(王春早)^1,2, Baoxing Duan(段宝兴)^1,†, Licheng Sun(孙李诚)¹, and Yintang Yang(杨银堂)¹

1 Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Department of Physics and Electronic Information, Shaoxing University, Shaoxing 312000, China

收稿日期:2021-05-15 修回日期:2021-09-23 接受日期:2021-09-24 出版日期:2022-03-16 发布日期:2022-03-10
通讯作者: Baoxing Duan E-mail:bxduan@163.com
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2015CB351906) and Science Foundation for Distinguished Young Scholars of Shaanxi Province, China (Grant No. 2018JC-017).

Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench

Chunzao Wang(王春早)^1,2, Baoxing Duan(段宝兴)^1,†, Licheng Sun(孙李诚)¹, and Yintang Yang(杨银堂)¹

1 Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Department of Physics and Electronic Information, Shaoxing University, Shaoxing 312000, China

Received:2021-05-15 Revised:2021-09-23 Accepted:2021-09-24 Online:2022-03-16 Published:2022-03-10
Contact: Baoxing Duan E-mail:bxduan@163.com
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2015CB351906) and Science Foundation for Distinguished Young Scholars of Shaanxi Province, China (Grant No. 2018JC-017).

摘要/Abstract

摘要： A lateral insulated gate bipolar transistor (LIGBT) based on silicon-on-insulator (SOI) structure is proposed and investigated. This device features a compound dielectric buried layer (CDBL) and an assistant-depletion trench (ADT). The CDBL is employed to introduce two high electric field peaks that optimize the electric field distributions and that, under the same breakdown voltage (BV) condition, allow the CDBL to acquire a drift region of shorter length and a smaller number of stored carriers. Reducing their numbers helps in fast-switching. Furthermore, the ADT contributes to the rapid extraction of the stored carriers from the drift region as well as the formation of an additional heat-flow channel. The simulation results show that the BV of the proposed LIGBT is increased by 113% compared with the conventional SOI LIGBT of the same length L_D. Contrastingly, the length of the drift region of the proposed device (11.2 μ) is about one third that of a traditional device (33 μ) with the same BV of 141 V. Therefore, the turn-off loss (E_OFF) of the CDBL SOI LIGBT is decreased by 88.7% compared with a conventional SOI LIGBT when the forward voltage drop (V_F) is 1.64 V. Moreover, the short-circuit failure time of the proposed device is 45% longer than that of the conventional SOI LIGBT. Therefor, the proposed CDBL SOI LIGBT exhibits a better V_F-E_OFF tradeoff and an improved short-circuit robustness.

关键词: lateral insulated gate bipolar transistor, breakdown voltage, electric field modulation, turn-off loss

Abstract: A lateral insulated gate bipolar transistor (LIGBT) based on silicon-on-insulator (SOI) structure is proposed and investigated. This device features a compound dielectric buried layer (CDBL) and an assistant-depletion trench (ADT). The CDBL is employed to introduce two high electric field peaks that optimize the electric field distributions and that, under the same breakdown voltage (BV) condition, allow the CDBL to acquire a drift region of shorter length and a smaller number of stored carriers. Reducing their numbers helps in fast-switching. Furthermore, the ADT contributes to the rapid extraction of the stored carriers from the drift region as well as the formation of an additional heat-flow channel. The simulation results show that the BV of the proposed LIGBT is increased by 113% compared with the conventional SOI LIGBT of the same length L_D. Contrastingly, the length of the drift region of the proposed device (11.2 μ) is about one third that of a traditional device (33 μ) with the same BV of 141 V. Therefore, the turn-off loss (E_OFF) of the CDBL SOI LIGBT is decreased by 88.7% compared with a conventional SOI LIGBT when the forward voltage drop (V_F) is 1.64 V. Moreover, the short-circuit failure time of the proposed device is 45% longer than that of the conventional SOI LIGBT. Therefor, the proposed CDBL SOI LIGBT exhibits a better V_F-E_OFF tradeoff and an improved short-circuit robustness.

Key words: lateral insulated gate bipolar transistor, breakdown voltage, electric field modulation, turn-off loss

中图分类号: (Semiconductor-insulator-semiconductor structures)

73.40.Ty

85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Tv (Field effect devices)

Chunzao Wang(王春早), Baoxing Duan(段宝兴), Licheng Sun(孙李诚), and Yintang Yang(杨银堂). Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench[J]. 中国物理B, 2022, 31(4): 47304-047304.

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Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench

Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench

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