[1] |
Qi C L, Huang Y, Zhan T, Wang Q J, Yi X Y and Liu Z Q 2017 J. Semicond. 38 084005
doi: 10.1088/1674-4926/38/8/084005
|
[2] |
Zhao D G, Yang J, Liu Z S, Chen P, Zhu J J, Jiang D S, Shi Y S, Wang H, Duan L H, Zhang L Q and Yang H 2017 J. Semicond. 38 051001
doi: 10.1088/1674-4926/38/5/051001
|
[3] |
Jiang L R, Liu J P, Tian A Q, Cheng Y, Li Z C, Zhang L Q, Zhang S M, Li D Y, Ikeda M and Yang H 2016 J. Semicond. 37 111001
doi: 10.1088/1674-4926/37/11/111001
|
[4] |
Wu D X, Ma P, Liu B T, Zhang S, Wang J X and Li J M 2016 J. Semicond. 37 104003
doi: 10.1088/1674-4926/37/10/104003
|
[5] |
Sun Q, Yan W, Feng M X, Li Z C, Feng B, Zhao H M and Yang H 2016 J. Semicond. 37 044006
doi: 10.1088/1674-4926/37/4/044006
|
[6] |
Xian Y L, Huang S J, Zheng Z Y, Fan B F, Wu Z S, Jiang H and Wang G 2011 J. Cryst. Growth 325 32
|
[7] |
Takeya M and Ikeda M 2001 Jpn. J. Appl. Phys. 40 6260
doi: 10.1143/JJAP.40.6260
|
[8] |
Youn D H, Lachab M, Hao M S, Sugahara T, Takenaka H, Naoi Y and Sakai S 1999 Jpn. J. Appl. Phys. 38 631
doi: 10.1143/JJAP.38.631
|
[9] |
Amano H, Kito M, Hiramatsu K and Akasaki I 1989 Jpn. J. Appl. Phys. 28 L2112
|
[10] |
McCluskey M D, Romano L T, Krusor B S, Johnson N M, Suski T and Jun J 1998 Appl. Phys. Lett. 73 1281
doi: 10.1063/1.122149
|
[11] |
Yang J, Zhao D G, Jiang D S, Chen P, Liu Z S, Zhu J J, Le L C, Li X J, He X G, Zhang L Q and Yang H 2016 Chin. Phys. B 25 027102
doi: 10.1088/1674-1056/25/2/027102
|
[12] |
Chen J T, Forsberg U and Janzen E 2013 Appl. Phys. Lett. 102 193506
doi: 10.1063/1.4804600
|
[13] |
Kaufmann U, Kunzer M, Obloh H, Maier M, Manz C, Ramakrishnan A and Santic B 1999 Phys. Rev. B 59 5561
doi: 10.1103/PhysRevB.59.5561
|
[14] |
Obloh H, Bachem K H, Kaufmann U, Kunzer M, Maier M, Ramakrishnan A and Schlotter P 1998 J. Cryst. Growth 195 270
doi: 10.1016/S0022-0248(98)00578-8
|
[15] |
Nakagawa Y, Haraguchi M, Fukui M, Tanaka S, Sakaki A, Kususe K, Hosokawa N, Takehara T, Morioka Y, Iijima H, Kubota M, Abe M, Mukai T, Takagi H and Shinomiya G 2004 Jpn. J. Appl. Phys. 43 23
doi: 10.1143/JJAP.43.23
|
[16] |
Yang J, Zhao D G, Jiang D S, Chen P, Zhu J J, Liu Z S, Le L C, He X G and Li X J 2015 J. Vac. Sci. Technol. A 33 021505
doi: 10.1116/1.4904035
|
[17] |
Wampler W R, Myers S M, Wright A F, Barbour J C, Seager C H and Han J 2001 J. Appl. Phys. 90 108
doi: 10.1063/1.1377609
|
[18] |
Jeong S M, Shim H W, Yoon H S, Cheong M G, Choi R J, Suh E K and Lee H J 2002 J. Appl. Phys. 91 9711
doi: 10.1063/1.1479478
|
[19] |
Myers S M, Wright A F, Petersen G A, Seager C H, Crawford M H, Wampler W R and Han J 2000 J. Appl. Phys. 88 4676
doi: 10.1063/1.1309123
|
[20] |
Kaufmann U, Kunzer M, Obloh H, Maier M, Manz Ch and Ramakrishnan A 1999 Phys. Rev. B 59 5561
doi: 10.1103/PhysRevB.59.5561
|
[21] |
Kaufmann U, Kunzer M, Maier M, Obloh H, Ramakrishnan A, Santic B and Schlotter P 1998 Appl. Phys. Lett. 72 1326
doi: 10.1063/1.120983
|
[22] |
Neugebauer J and Van de Walle C G 1996 Materials Research Society Conference Proceedings 423 619
doi: 10.1557/PROC-423-619
|
[23] |
Oh E, Park H and Park Y 1998 Appl. Phys. Lett. 72 70
doi: 10.1063/1.120647
|
[24] |
Lee S G and Chang K J 1999 Semicond. Sci. Technol. 14 138
doi: 10.1088/0268-1242/14/2/006
|
[25] |
Pearton S J, Lee J W and Yuan C 1996 Appl. Phys. Lett. 68 2690
doi: 10.1063/1.116310
|