中国物理B ›› 2019, Vol. 28 ›› Issue (1): 16102-016102.doi: 10.1088/1674-1056/28/1/016102

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Effect of substrate type on Ni self-assembly process

Xuzhao Chai(柴旭朝), Boyang Qu(瞿博阳), Yuechao Jiao(焦岳超), Ping Liu(刘萍), Yanxia Ma(马彦霞), Fengge Wang(王凤歌), Xiaoquan Li(李晓荃), Xiangqian Fang(方向前), Ping Han(韩平), Rong Zhang(张荣)   

  1. 1 School of Electric and Information Engineering, Zhongyuan University of Technology, Zhengzhou 450007, China;
    2 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
  • 收稿日期:2018-06-13 修回日期:2018-09-12 出版日期:2019-01-05 发布日期:2019-01-05
  • 通讯作者: Xuzhao Chai, Boyang Qu E-mail:xzchai@zut.edu.cn;6509@zut.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61473266 and 61673404), the Program for Science&Technology Innovation Talents in Universities of Henan Province, China (Grant No. 16HASTIT033), the Science and Technique Foundation of Henan Province, China (Grant Nos. 132102210521, 152102210153, 182102210516, and 172102210601), the Key Program in Universities of Henan Province, China (Grant No. 17B520044), and the Science and Technique Project of the China National Textile and Apparel Council (Grant No. 2018104).

Effect of substrate type on Ni self-assembly process

Xuzhao Chai(柴旭朝)1, Boyang Qu(瞿博阳)1, Yuechao Jiao(焦岳超)1, Ping Liu(刘萍)1, Yanxia Ma(马彦霞)1, Fengge Wang(王凤歌)1, Xiaoquan Li(李晓荃)1, Xiangqian Fang(方向前)1, Ping Han(韩平)2, Rong Zhang(张荣)2   

  1. 1 School of Electric and Information Engineering, Zhongyuan University of Technology, Zhengzhou 450007, China;
    2 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
  • Received:2018-06-13 Revised:2018-09-12 Online:2019-01-05 Published:2019-01-05
  • Contact: Xuzhao Chai, Boyang Qu E-mail:xzchai@zut.edu.cn;6509@zut.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61473266 and 61673404), the Program for Science&Technology Innovation Talents in Universities of Henan Province, China (Grant No. 16HASTIT033), the Science and Technique Foundation of Henan Province, China (Grant Nos. 132102210521, 152102210153, 182102210516, and 172102210601), the Key Program in Universities of Henan Province, China (Grant No. 17B520044), and the Science and Technique Project of the China National Textile and Apparel Council (Grant No. 2018104).

摘要:

Ni self-assembly has been performed on GaN (0001), Si (111) and sapphire (0001) substrates. Scanning electron microscopy (SEM) images verify that the Si (111) substrate leads to failure of the Ni assembly due to Si-N interlayer formation; the GaN (0001) and sapphire (0001) substrates promote assembly of the Ni particles. This indicates that the GaN/sapphire (0001) substrates are fit for Ni self-assembly. For the Ni assembly process on GaN/sapphire (0001) substrates, three differences are observed from the x-ray diffraction (XRD) patterns:(i) Ni self-assembly on the sapphire (0001) needs a 900℃ annealing temperature, lower than that on the GaN (0001) at 1000℃, and loses the Ni network structure stage; (ii) the Ni particle shape is spherical for the sapphire (0001) substrate, and truncated-cone for the GaN (0001) substrate; and (iii) a Ni-N interlayer forms between the Ni particles and the GaN (0001) substrate, but an interlayer does not appear for the sapphire (0001) substrate. All these differences are attributed to the interaction between the Ni and the GaN/sapphire (0001) substrates. A model is introduced to explain this mechanism.

关键词: self-assembly, thermal annealing, substrates

Abstract:

Ni self-assembly has been performed on GaN (0001), Si (111) and sapphire (0001) substrates. Scanning electron microscopy (SEM) images verify that the Si (111) substrate leads to failure of the Ni assembly due to Si-N interlayer formation; the GaN (0001) and sapphire (0001) substrates promote assembly of the Ni particles. This indicates that the GaN/sapphire (0001) substrates are fit for Ni self-assembly. For the Ni assembly process on GaN/sapphire (0001) substrates, three differences are observed from the x-ray diffraction (XRD) patterns:(i) Ni self-assembly on the sapphire (0001) needs a 900℃ annealing temperature, lower than that on the GaN (0001) at 1000℃, and loses the Ni network structure stage; (ii) the Ni particle shape is spherical for the sapphire (0001) substrate, and truncated-cone for the GaN (0001) substrate; and (iii) a Ni-N interlayer forms between the Ni particles and the GaN (0001) substrate, but an interlayer does not appear for the sapphire (0001) substrate. All these differences are attributed to the interaction between the Ni and the GaN/sapphire (0001) substrates. A model is introduced to explain this mechanism.

Key words: self-assembly, thermal annealing, substrates

中图分类号:  (Structure of nanoscale materials)

  • 61.46.-w
68.08.Bc (Wetting) 68.35.Fx (Diffusion; interface formation)