Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate

doi:10.1088/1674-1056/22/11/116804

中国物理B ›› 2013, Vol. 22 ›› Issue (11): 116804-116804.doi: 10.1088/1674-1056/22/11/116804

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate

刘智, 成步文, 李亚明, 李传波, 薛春来, 王启明

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2013-04-18 修回日期:2013-06-14 出版日期:2013-09-28 发布日期:2013-09-28
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2013CB632103) and the National Natural Science Foundation of China (Grant Nos. 61036003, 61176013, and 61177038).

Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate

Liu Zhi (刘智), Cheng Bu-Wen (成步文), Li Ya-Ming (李亚明), Li Chuan-Bo (李传波), Xue Chun-Lai (薛春来), Wang Qi-Ming (王启明)

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2013-04-18 Revised:2013-06-14 Online:2013-09-28 Published:2013-09-28
Contact: Cheng Bu-Wen E-mail:cbw@semi.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2013CB632103) and the National Natural Science Foundation of China (Grant Nos. 61036003, 61176013, and 61177038).

摘要/Abstract

摘要： Tensile strain, crystal quality, and surface morphology of 500 nm thick Ge films were improved after rapid thermal annealing at 900 ℃ for a short period (< 20 s). The films were grown on Si(001) substrates by ultra-high vacuum chemical vapor deposition. These improvements are attributed to relaxation and defect annihilation in the Ge films. However, after prolonged (>20 s) rapid thermal annealing, tensile strain and crystal quality degenerated. This phenomenon results from intensive Si–Ge mixing at high temperature.

关键词: Ge film, rapid thermal annealing, tensile strain, Si–Ge mixing

Abstract: Tensile strain, crystal quality, and surface morphology of 500 nm thick Ge films were improved after rapid thermal annealing at 900 ℃ for a short period (< 20 s). The films were grown on Si(001) substrates by ultra-high vacuum chemical vapor deposition. These improvements are attributed to relaxation and defect annihilation in the Ge films. However, after prolonged (>20 s) rapid thermal annealing, tensile strain and crystal quality degenerated. This phenomenon results from intensive Si–Ge mixing at high temperature.

Key words: Ge film, rapid thermal annealing, tensile strain, Si–Ge mixing

中图分类号: (Semiconductors)

68.55.ag

65.40.De (Thermal expansion; thermomechanical effects) 68.37.Ps (Atomic force microscopy (AFM))

刘智, 成步文, 李亚明, 李传波, 薛春来, 王启明. Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate[J]. 中国物理B, 2013, 22(11): 116804-116804.

Liu Zhi (刘智), Cheng Bu-Wen (成步文), Li Ya-Ming (李亚明), Li Chuan-Bo (李传波), Xue Chun-Lai (薛春来), Wang Qi-Ming (王启明). Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate[J]. Chin. Phys. B, 2013, 22(11): 116804-116804.

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Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate

Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate

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