中国物理B ›› 2013, Vol. 22 ›› Issue (6): 68204-068204.doi: 10.1088/1674-1056/22/6/068204

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Effects of rapid thermal annealing on room temperature NO2-sensing properties of WO3 thin film under LED radiation

胡明, 贾丁立, 刘青林, 李明达, 孙鹏   

  1. School of Electronics and Information Engineering, Tianjin University, Tianjin 300072, China
  • 收稿日期:2012-11-14 修回日期:2013-01-12 出版日期:2013-05-01 发布日期:2013-05-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62171070, 60771019, and 60801018), and Tianjin Key Research Program of Application Foundation and Advanced Technology, China (Grant No. 11JCZDJC15300).

Effects of rapid thermal annealing on room temperature NO2-sensing properties of WO3 thin film under LED radiation

Hu Ming (胡明), Jia Ding-Li (贾丁立), Liu Qing-Lin (刘青林), Li Ming-Da (李明达), Sun Peng (孙鹏)   

  1. School of Electronics and Information Engineering, Tianjin University, Tianjin 300072, China
  • Received:2012-11-14 Revised:2013-01-12 Online:2013-05-01 Published:2013-05-01
  • Contact: Hu Ming E-mail:huming@tju.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62171070, 60771019, and 60801018), and Tianjin Key Research Program of Application Foundation and Advanced Technology, China (Grant No. 11JCZDJC15300).

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摘要： WO3 thin films were sputtered onto alumina substrates by DC facing-target magnetron sputtering. One sample was rapid-thermal-annealed (RTA) at 600 ℃ in a gas mixture of N2:O2=4:1, and as a comparison, another was conventionally thermal-annealed at 600 ℃ in air. The morphology of both was investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM), and the crystallization structure and phase identification were characterized by X-ray diffraction (XRD). The NO2-sensing measurements were taken under LED light at room temperature. Sensitivity of the RTA-treated sample is high, up to nearly 100, whereas sensitivity of the conventionally thermal-annealed sample is about 5 under the same conditions. From the much better selectivity and response-recovery characteristics, it can be concluded that, compared to conventional thermal annealing, RTA has a greater effect on the NO2-sensing properties of WO3 thin films.

关键词: gas sensor, tungsten oxide thin film, rapid thermal annealing, LED

Abstract: WO3 thin films were sputtered onto alumina substrates by DC facing-target magnetron sputtering. One sample was rapid-thermal-annealed (RTA) at 600 ℃ in a gas mixture of N2:O2=4:1, and as a comparison, another was conventionally thermal-annealed at 600 ℃ in air. The morphology of both was investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM), and the crystallization structure and phase identification were characterized by X-ray diffraction (XRD). The NO2-sensing measurements were taken under LED light at room temperature. Sensitivity of the RTA-treated sample is high, up to nearly 100, whereas sensitivity of the conventionally thermal-annealed sample is about 5 under the same conditions. From the much better selectivity and response-recovery characteristics, it can be concluded that, compared to conventional thermal annealing, RTA has a greater effect on the NO2-sensing properties of WO3 thin films.

Key words: gas sensor, tungsten oxide thin film, rapid thermal annealing, LED

中图分类号:  (Electrochemical sensors)

  • 82.47.Rs
73.61.Cw (Elemental semiconductors) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization) 85.60.Jb (Light-emitting devices)