›› 2014, Vol. 23 ›› Issue (7): 76801-076801.doi: 10.1088/1674-1056/23/7/076801
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
梁继然a, 吴劢君a, 胡明a, 刘剑b, 朱乃伟a, 夏晓旭a, 陈弘达c
Liang Ji-Ran (梁继然)a, Wu Mai-Jun (吴劢君)a, Hu Ming (胡明)a, Liu Jian (刘剑)b, Zhu Nai-Wei (朱乃伟)a, Xia Xiao-Xu (夏晓旭)a, Chen Hong-Da (陈弘达)c
摘要: Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal-insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from (111) to (011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal-insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal-insulator transition.
中图分类号: (Thickness)