›› 2014, Vol. 23 ›› Issue (7): 76801-076801.doi: 10.1088/1674-1056/23/7/076801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties

梁继然a, 吴劢君a, 胡明a, 刘剑b, 朱乃伟a, 夏晓旭a, 陈弘达c   

  1. a School of Electronic Information and Engineering, Tianjin University, Tianjin 300072, China;
    b State Key Laboratory for Super Lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    c State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2013-11-05 修回日期:2014-01-23 出版日期:2014-07-15 发布日期:2014-07-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61101055) and the Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20100032120029).

Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties

Liang Ji-Ran (梁继然)a, Wu Mai-Jun (吴劢君)a, Hu Ming (胡明)a, Liu Jian (刘剑)b, Zhu Nai-Wei (朱乃伟)a, Xia Xiao-Xu (夏晓旭)a, Chen Hong-Da (陈弘达)c   

  1. a School of Electronic Information and Engineering, Tianjin University, Tianjin 300072, China;
    b State Key Laboratory for Super Lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    c State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2013-11-05 Revised:2014-01-23 Online:2014-07-15 Published:2014-07-15
  • Contact: Liang Ji-Ran E-mail:liang_jiran@tju.edu.cn
  • About author:68.55.jd; 78.20.-e; 73.50.Lw
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61101055) and the Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20100032120029).

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摘要： Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal-insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from (111) to (011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal-insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal-insulator transition.

关键词: vanadium dioxide, metal-insulator transition, rapid thermal annealing, hysteresis

Abstract: Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal-insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from (111) to (011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal-insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal-insulator transition.

Key words: vanadium dioxide, metal-insulator transition, rapid thermal annealing, hysteresis

中图分类号:  (Thickness)

  • 68.55.jd
78.20.-e (Optical properties of bulk materials and thin films) 73.50.Lw (Thermoelectric effects)