Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures

doi:10.1088/1674-1056/27/12/127803

中国物理B ›› 2018, Vol. 27 ›› Issue (12): 127803-127803.doi: 10.1088/1674-1056/27/12/127803

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Influence of carrier gas H₂ flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures

1 State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
4 Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, Suzhou 215123, China;
5 Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China

收稿日期:2018-09-06 修回日期:2018-09-18 出版日期:2018-12-05 发布日期:2018-12-05
通讯作者: Jing Yang, De-Gang Zhao E-mail:yangjing333@semi.ac.cn;dgzhao@red.semi.ac.cn
基金资助:
Project supported by the the Science Challenge Project of China (Grant No. TZ2016003), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, and 61474110), and Beijing Municipal Science and Technology Project (Grant No. Z161100002116037).

Influence of carrier gas H₂ flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures

Shuang-Tao Liu(刘双韬)^1,2, Jing Yang(杨静)¹, De-Gang Zhao(赵德刚)^1,3, De-Sheng Jiang(江德生)¹, Feng Liang(梁锋)¹, Ping Chen(陈平)¹, Jian-Jun Zhu(朱建军)¹, Zong-Shun Liu(刘宗顺)¹, Wei Liu(刘炜)¹, Yao Xing(邢瑶)¹, Li-Yuan Peng(彭莉媛)¹, Li-Qun Zhang(张立群)⁴, Wen-Jie Wang(王文杰)⁵, Mo Li(李沫)⁵

1 State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
4 Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, Suzhou 215123, China;
5 Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China

Received:2018-09-06 Revised:2018-09-18 Online:2018-12-05 Published:2018-12-05
Contact: Jing Yang, De-Gang Zhao E-mail:yangjing333@semi.ac.cn;dgzhao@red.semi.ac.cn
Supported by:
Project supported by the the Science Challenge Project of China (Grant No. TZ2016003), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, and 61474110), and Beijing Municipal Science and Technology Project (Grant No. Z161100002116037).

摘要/Abstract

摘要：

In this work, we study the influence of carrier gas H₂ flow rate on the quality of p-type GaN grown and annealed at lower temperatures. It is found that the concentration of H atoms in Mg-doped GaN epilayer can effectively decrease with appropriately reducing the carrier gas H₂ flow rate, and a high-quality p-type GaN layer could be obtained at a comparatively low annealing temperature by reducing the carrier gas H₂ flow rate. Meanwhile, it is found that the intensity and wavelength of DAP peak are changed as the annealing temperature varies, which shows that the thermal annealing has a remarkable effect not only on the activation of acceptors but also on the compensation donors.

关键词: p-type GaN, thermal annealing, H atom state

Abstract:

Key words: p-type GaN, thermal annealing, H atom state

中图分类号: (Semiconductors)

78.40.Fy

78.55.Cr (III-V semiconductors) 71.20.Nr (Semiconductor compounds)

刘双韬, 杨静, 赵德刚, 江德生, 梁锋, 陈平, 朱建军, 刘宗顺, 刘炜, 邢瑶, 彭莉媛, 张立群, 王文杰, 李沫. Influence of carrier gas H₂ flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures[J]. 中国物理B, 2018, 27(12): 127803-127803.

Shuang-Tao Liu(刘双韬), Jing Yang(杨静), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Feng Liang(梁锋), Ping Chen(陈平), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Wei Liu(刘炜), Yao Xing(邢瑶), Li-Yuan Peng(彭莉媛), Li-Qun Zhang(张立群), Wen-Jie Wang(王文杰), Mo Li(李沫). Influence of carrier gas H₂ flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures[J]. Chin. Phys. B, 2018, 27(12): 127803-127803.

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Influence of carrier gas H₂ flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures

Influence of carrier gas H₂ flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures

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