Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (1): 18801-018801.doi: 10.1088/1674-1056/22/1/018801

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Performance improvement of CdS/Cu(In,Ga)Se2 solar cells after rapid thermal annealing

陈东生a b, 杨洁a, 徐飞a, 周平华a, 杜汇伟a, 石建伟a, 于征汕c, 张玉红c, Brian Bartholomeuszd, 马忠权a   

  1. a SHU-SolarE R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, China;
    b College of Mathematics and Physics, Shanghai University of Electric Power, Shanghai 200090, China;
    c Shanghai Solar EnerTech Co. Ltd, Shanghai 201206, China;
    d Applied Quantum Technology Ltd. Co. USA
  • 收稿日期:2012-04-27 修回日期:2012-07-15 出版日期:2012-12-01 发布日期:2012-12-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60876045), the Shanghai Leading Basic Research Project, China (Grant No. 09JC1405900), the Shanghai Leading Academic Discipline Project, China (Grant No. S30105), and the R&D Foundation of SHU-SOENs PV Joint Lab, China (Grant No. SS-E0700601). Part measurement was supported by Analysis and Testing Center of Shanghai University, China.

Performance improvement of CdS/Cu(In,Ga)Se2 solar cells after rapid thermal annealing

Chen Dong-Sheng (陈东生)a b, Yang Jie (杨洁)a, Xu Fei (徐飞)a, Zhou Ping-Hua (周平华)a, Du Hui-Wei (杜汇伟)a, Shi Jian-Wei (石建伟)a, Yu Zheng-Shan (于征汕)c, Zhang Yu-Hong (张玉红)c, Brian Bartholomeuszd, Ma Zhong-Quan (马忠权)a   

  1. a SHU-SolarE R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, China;
    b College of Mathematics and Physics, Shanghai University of Electric Power, Shanghai 200090, China;
    c Shanghai Solar EnerTech Co. Ltd, Shanghai 201206, China;
    d Applied Quantum Technology Ltd. Co. USA
  • Received:2012-04-27 Revised:2012-07-15 Online:2012-12-01 Published:2012-12-01
  • Contact: Ma Zhong-Quan E-mail:zqma@shu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60876045), the Shanghai Leading Basic Research Project, China (Grant No. 09JC1405900), the Shanghai Leading Academic Discipline Project, China (Grant No. S30105), and the R&D Foundation of SHU-SOENs PV Joint Lab, China (Grant No. SS-E0700601). Part measurement was supported by Analysis and Testing Center of Shanghai University, China.

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摘要： In this paper, we investigated the effect of rapid thermal annealing (RTA) on solar cell performance. An opto-electric conversion efficiency of 11.75% (Voc= 0.64 V, Jsc= 25.88 mA/cm2, FF=72.08%) was obtained under AM 1.5G when the cell was annealed at 300 ℃ for 30 s. The annealed solar cell showed an average absolute efficiency 1.5% higher than that of the as-deposited one. For the microstructure analysis and the physical phase confirmation, X-ray diffraction (XRD), Raman spectra, front surface reflection (FSR), internal quantum efficiency (IQE), and X-ray photoelectron spectroscopy (XPS) were respectively applied to distinguish the causes inducing the efficiency variation. All experimental results implied that the RTA eliminated recombination centers at the p-n junction, reduced the surface optical losses, enhanced the blue response of the CdS buffer layer, and improved the ohmic contact between Mo and Cu(In, Ga)Se2 (CIGS) layers. This leaded to the improved performance of CIGS solar cell.

关键词: CdS/Cu(In, Ga)Se2, solar cell, rapid thermal annealing, performance improvement

Abstract: In this paper, we investigated the effect of rapid thermal annealing (RTA) on solar cell performance. An opto-electric conversion efficiency of 11.75% (Voc= 0.64 V, Jsc= 25.88 mA/cm2, FF=72.08%) was obtained under AM 1.5G when the cell was annealed at 300 ℃ for 30 s. The annealed solar cell showed an average absolute efficiency 1.5% higher than that of the as-deposited one. For the microstructure analysis and the physical phase confirmation, X-ray diffraction (XRD), Raman spectra, front surface reflection (FSR), internal quantum efficiency (IQE), and X-ray photoelectron spectroscopy (XPS) were respectively applied to distinguish the causes inducing the efficiency variation. All experimental results implied that the RTA eliminated recombination centers at the p-n junction, reduced the surface optical losses, enhanced the blue response of the CdS buffer layer, and improved the ohmic contact between Mo and Cu(In, Ga)Se2 (CIGS) layers. This leaded to the improved performance of CIGS solar cell.

Key words: CdS/Cu(In, Ga)Se2, solar cell, rapid thermal annealing, performance improvement

中图分类号:  (Thin film Cu-based I-III-VI2 solar cells)

  • 88.40.jn
68.35.-p (Solid surfaces and solid-solid interfaces: structure and energetics)