中国物理B ›› 2017, Vol. 26 ›› Issue (9): 96103-096103.doi: 10.1088/1674-1056/26/9/096103
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
Qiwen Zheng(郑齐文), Jiangwei Cui(崔江维), Mengxin Liu(刘梦新), Dandan Su(苏丹丹), Hang Zhou(周航), Teng Ma(马腾), Xuefeng Yu(余学峰), Wu Lu(陆妩), Qi Guo(郭旗), Fazhan Zhao(赵发展)
Qiwen Zheng(郑齐文)1,2, Jiangwei Cui(崔江维)1,2, Mengxin Liu(刘梦新)4, Dandan Su(苏丹丹)1,2,3, Hang Zhou(周航)1,2,3, Teng Ma(马腾)1,2,3, Xuefeng Yu(余学峰)1,2, Wu Lu(陆妩)1,2, Qi Guo(郭旗)1,2, Fazhan Zhao(赵发展)4
摘要: In this work, the total ionizing dose (TID) effect on 130 nm partially depleted (PD) silicon-on-insulator (SOI) static random access memory (SRAM) cell stability is measured. The SRAM cell test structure allowing direct measurement of the static noise margin (SNM) is specifically designed and irradiated by gamma-ray. Both data sides' SNM of 130 nm PD SOI SRAM cell are decreased by TID, which is different from the conclusion obtained in old generation devices that one data side's SNM is decreased and the other data side's SNM is increased. Moreover, measurement of SNM under different supply voltages (Vdd) reveals that SNM is more sensitive to TID under lower Vdd. The impact of TID on SNM under data retention Vdd should be tested, because Vdd of SRAM cell under data retention mode is lower than normal Vdd. The mechanism under the above results is analyzed by measurement of I-V characteristics of SRAM cell transistors.
中图分类号: (γ-ray effects)