Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin
郑齐文, 崔江维, 刘梦新, 苏丹丹, 周航, 马腾, 余学峰, 陆妩, 郭旗, 赵发展
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin
Qiwen Zheng(郑齐文), Jiangwei Cui(崔江维), Mengxin Liu(刘梦新), Dandan Su(苏丹丹), Hang Zhou(周航), Teng Ma(马腾), Xuefeng Yu(余学峰), Wu Lu(陆妩), Qi Guo(郭旗), Fazhan Zhao(赵发展)
中国物理B
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2017, (9): 96103
-096103
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DOI: 10.1088/1674-1056/26/9/096103