Pattern dependence in synergistic effects of total dose onsingle-event upset hardness

doi:10.1088/1674-1056/25/9/096109

中国物理B ›› 2016, Vol. 25 ›› Issue (9): 96109-096109.doi: 10.1088/1674-1056/25/9/096109

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Pattern dependence in synergistic effects of total dose onsingle-event upset hardness

Hongxia Guo(郭红霞), Lili Ding(丁李利), Yao Xiao(肖尧), Fengqi Zhang(张凤祁), Yinhong Luo(罗尹虹), Wen Zhao(赵雯), Yuanming Wang(王园明)

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710072, China

收稿日期:2016-01-02 修回日期:2016-05-08 出版日期:2016-09-05 发布日期:2016-09-05
通讯作者: Hongxia Guo E-mail:guohxnint@126.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. U1532261).

Pattern dependence in synergistic effects of total dose onsingle-event upset hardness

Hongxia Guo(郭红霞), Lili Ding(丁李利), Yao Xiao(肖尧), Fengqi Zhang(张凤祁), Yinhong Luo(罗尹虹), Wen Zhao(赵雯), Yuanming Wang(王园明)

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710072, China

Received:2016-01-02 Revised:2016-05-08 Online:2016-09-05 Published:2016-09-05
Contact: Hongxia Guo E-mail:guohxnint@126.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. U1532261).

摘要/Abstract

摘要： The pattern dependence in synergistic effects was studied in a 0.18 μ static random access memory (SRAM) circuit. Experiments were performed under two SEU test environments: 3 MeV protons and heavy ions. Measured results show different trends. In heavy ion SEU test, the degradation in the peripheral circuitry also existed because the measured SEU cross section decreased regardless of the patterns written to the SRAM array. TCAD simulation was performed. TID-induced degradation in nMOSFETs mainly induced the imprint effect in the SRAM cell, which is consistent with the measured results under the proton environment, but cannot explain the phenomena observed under heavy ion environment. A possible explanation could be the contribution from the radiation-induced GIDL in pMOSFETs.

关键词: pattern dependence, total dose, single event upset (SEU), static random access memory (SRAM)

Abstract: The pattern dependence in synergistic effects was studied in a 0.18 μ static random access memory (SRAM) circuit. Experiments were performed under two SEU test environments: 3 MeV protons and heavy ions. Measured results show different trends. In heavy ion SEU test, the degradation in the peripheral circuitry also existed because the measured SEU cross section decreased regardless of the patterns written to the SRAM array. TCAD simulation was performed. TID-induced degradation in nMOSFETs mainly induced the imprint effect in the SRAM cell, which is consistent with the measured results under the proton environment, but cannot explain the phenomena observed under heavy ion environment. A possible explanation could be the contribution from the radiation-induced GIDL in pMOSFETs.

Key words: pattern dependence, total dose, single event upset (SEU), static random access memory (SRAM)

中图分类号: (Physical radiation effects, radiation damage)

61.80.-x

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

郭红霞, 丁李利, 肖尧, 张凤祁, 罗尹虹, 赵雯, 王园明. Pattern dependence in synergistic effects of total dose onsingle-event upset hardness[J]. 中国物理B, 2016, 25(9): 96109-096109.

Hongxia Guo(郭红霞), Lili Ding(丁李利), Yao Xiao(肖尧), Fengqi Zhang(张凤祁), Yinhong Luo(罗尹虹), Wen Zhao(赵雯), Yuanming Wang(王园明). Pattern dependence in synergistic effects of total dose onsingle-event upset hardness[J]. Chin. Phys. B, 2016, 25(9): 96109-096109.

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Pattern dependence in synergistic effects of total dose onsingle-event upset hardness

Pattern dependence in synergistic effects of total dose onsingle-event upset hardness

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