Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

doi:10.1088/1674-1056/25/7/078501

中国物理B ›› 2016, Vol. 25 ›› Issue (7): 78501-078501.doi: 10.1088/1674-1056/25/7/078501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

Bingqing Xie(解冰清), Bo Li(李博), Jinshun Bi(毕津顺), Jianhui Bu(卜建辉), Chi Wu(吴驰), Binhong Li(李彬鸿), Zhengsheng Han(韩郑生), Jiajun Luo(罗家俊)

Key Laboratory of Silicon Device and Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2015-12-28 修回日期:2016-03-02 出版日期:2016-07-05 发布日期:2016-07-05
通讯作者: Jiajun Luo E-mail:luojj@ime.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61176095 and 61404169) and the Youth Innovation Promotion Association of Chinese Academy of Sciences.

Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

Bingqing Xie(解冰清), Bo Li(李博), Jinshun Bi(毕津顺), Jianhui Bu(卜建辉), Chi Wu(吴驰), Binhong Li(李彬鸿), Zhengsheng Han(韩郑生), Jiajun Luo(罗家俊)

Key Laboratory of Silicon Device and Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2015-12-28 Revised:2016-03-02 Online:2016-07-05 Published:2016-07-05
Contact: Jiajun Luo E-mail:luojj@ime.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61176095 and 61404169) and the Youth Innovation Promotion Association of Chinese Academy of Sciences.

摘要/Abstract

摘要： The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator (SOI) metal-oxide-silicon (MOS) field-effect-transistors (FETs) were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature.

关键词: cryogenic temperature, metal-oxide-semiconductor, silicon-on-insulator, capacitance

Abstract: The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator (SOI) metal-oxide-silicon (MOS) field-effect-transistors (FETs) were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature.

Key words: cryogenic temperature, metal-oxide-semiconductor, silicon-on-insulator, capacitance

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

07.20.Mc (Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment)

解冰清, 李博, 毕津顺, 卜建辉, 吴驰, 李彬鸿, 韩郑生, 罗家俊. Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices[J]. 中国物理B, 2016, 25(7): 78501-078501.

Bingqing Xie(解冰清), Bo Li(李博), Jinshun Bi(毕津顺), Jianhui Bu(卜建辉), Chi Wu(吴驰), Binhong Li(李彬鸿), Zhengsheng Han(韩郑生), Jiajun Luo(罗家俊). Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices[J]. Chin. Phys. B, 2016, 25(7): 78501-078501.

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Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

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