中国物理B ›› 2017, Vol. 26 ›› Issue (8): 88501-088501.doi: 10.1088/1674-1056/26/8/088501
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell
Bing Ye(叶兵), Jie Liu(刘杰), Tie-Shan Wang(王铁山), Tian-Qi Liu(刘天奇), Jie Luo(罗捷), Bin Wang(王斌), Ya-Nan Yin(殷亚楠), Qing-Gang Ji(姬庆刚), Pei-Pei Hu(胡培培), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东)
- 1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
2 University of Chinese Academy of Sciences (UCAS), Beijing 100049, China;
3 Lanzhou University, Lanzhou 730000, China
Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell
Bing Ye(叶兵)1,2,3, Jie Liu(刘杰)1, Tie-Shan Wang(王铁山)3, Tian-Qi Liu(刘天奇)1,2, Jie Luo(罗捷)1,2, Bin Wang(王斌)1,2, Ya-Nan Yin(殷亚楠)1,2, Qing-Gang Ji(姬庆刚)1,2, Pei-Pei Hu(胡培培)1,2, You-Mei Sun(孙友梅)1, Ming-Dong Hou(侯明东)1
- 1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
2 University of Chinese Academy of Sciences (UCAS), Beijing 100049, China;
3 Lanzhou University, Lanzhou 730000, China
摘要：
This paper presents a simulation study of the impact of energy straggle on a proton-induced single event upset (SEU) test in a commercial 65-nm static random access memory cell. The simulation results indicate that the SEU cross sections for low energy protons are significantly underestimated due to the use of degraders in the SEU test. In contrast, using degraders in a high energy proton test may cause the overestimation of the SEU cross sections. The results are confirmed by the experimental data and the impact of energy straggle on the SEU cross section needs to be taken into account when conducting a proton-induced SEU test in a nanodevice using degraders.
中图分类号: (Semiconductor-device characterization, design, and modeling)
- 85.30.De