中国物理B ›› 2018, Vol. 27 ›› Issue (2): 28502-028502.doi: 10.1088/1674-1056/27/2/028502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs

Shu-Xiang Sun(孙树祥), Zhi-Chao Wei(魏志超), Peng-Hui Xia(夏鹏辉), Wen-Bin Wang(王文斌), Zhi-Yong Duan(段智勇), Yu-Xiao Li(李玉晓), Ying-Hui Zhong(钟英辉), Peng Ding(丁芃), Zhi Jin(金智)   

  1. 1. School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China;
    2. China Academy of Space Technology, Beijing 100086, China;
    3. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2017-09-25 修回日期:2017-11-02 出版日期:2018-02-05 发布日期:2018-02-05
  • 通讯作者: Ying-Hui Zhong E-mail:zhongyinghui@zzu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11775191, 61404115, 61434006, and 11475256), the Program for Innovative Research Team (in Science and Technology) in University of Henan Province, China (Grant No. 18IRTSTHN016), and the Development Fund for Outstanding Young Teachers in Zhengzhou University of China (Grant No. 1521317004).

Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs

Shu-Xiang Sun(孙树祥)1, Zhi-Chao Wei(魏志超)2, Peng-Hui Xia(夏鹏辉)1, Wen-Bin Wang(王文斌)1, Zhi-Yong Duan(段智勇)1, Yu-Xiao Li(李玉晓)1, Ying-Hui Zhong(钟英辉)1, Peng Ding(丁芃)3, Zhi Jin(金智)3   

  1. 1. School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China;
    2. China Academy of Space Technology, Beijing 100086, China;
    3. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2017-09-25 Revised:2017-11-02 Online:2018-02-05 Published:2018-02-05
  • Contact: Ying-Hui Zhong E-mail:zhongyinghui@zzu.edu.cn
  • About author:85.30.De; 73.61.Ey; 14.20.Dh
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11775191, 61404115, 61434006, and 11475256), the Program for Innovative Research Team (in Science and Technology) in University of Henan Province, China (Grant No. 18IRTSTHN016), and the Development Fund for Outstanding Young Teachers in Zhengzhou University of China (Grant No. 1521317004).

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摘要： InP-based high electron mobility transistors (HEMTs) will be affected by protons from different directions in space radiation applications. The proton irradiation effects on InAlAs/InGaAs hetero-junction structures of InP-based HEMTs are studied at incident angles ranging from 0 to 89.9° by SRIM software. With the increase of proton incident angle, the change trend of induced vacancy defects in the InAlAs/InGaAs hetero-junction region is consistent with the vacancy energy loss trend of incident protons. Namely, they both have shown an initial increase, followed by a decrease after incident angle has reached 30°. Besides, the average range and ultimate stopping positions of incident protons shift gradually from buffer layer to hetero-junction region, and then go up to gate metal. Finally, the electrical characteristics of InP-based HEMTs are investigated after proton irradiation at different incident angles by Sentaurus-TCAD. The induced vacancy defects are considered self-consistently through solving Poisson's and current continuity equations. Consequently, the extrinsic transconductance, pinch-off voltage and channel current demonstrate the most serious degradation at the incident angle of 30°, which can be accounted for the most severe carrier sheet density reduction under this condition.

关键词: proton irradiation, InP-based HEMTs, InAlAs/InGaAs hetero-junction, incident angle

Abstract: InP-based high electron mobility transistors (HEMTs) will be affected by protons from different directions in space radiation applications. The proton irradiation effects on InAlAs/InGaAs hetero-junction structures of InP-based HEMTs are studied at incident angles ranging from 0 to 89.9° by SRIM software. With the increase of proton incident angle, the change trend of induced vacancy defects in the InAlAs/InGaAs hetero-junction region is consistent with the vacancy energy loss trend of incident protons. Namely, they both have shown an initial increase, followed by a decrease after incident angle has reached 30°. Besides, the average range and ultimate stopping positions of incident protons shift gradually from buffer layer to hetero-junction region, and then go up to gate metal. Finally, the electrical characteristics of InP-based HEMTs are investigated after proton irradiation at different incident angles by Sentaurus-TCAD. The induced vacancy defects are considered self-consistently through solving Poisson's and current continuity equations. Consequently, the extrinsic transconductance, pinch-off voltage and channel current demonstrate the most serious degradation at the incident angle of 30°, which can be accounted for the most severe carrier sheet density reduction under this condition.

Key words: proton irradiation, InP-based HEMTs, InAlAs/InGaAs hetero-junction, incident angle

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
73.61.Ey (III-V semiconductors) 14.20.Dh (Protons and neutrons)