中国物理B ›› 2018, Vol. 27 ›› Issue (2): 28502-028502.doi: 10.1088/1674-1056/27/2/028502
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Shu-Xiang Sun(孙树祥), Zhi-Chao Wei(魏志超), Peng-Hui Xia(夏鹏辉), Wen-Bin Wang(王文斌), Zhi-Yong Duan(段智勇), Yu-Xiao Li(李玉晓), Ying-Hui Zhong(钟英辉), Peng Ding(丁芃), Zhi Jin(金智)
Shu-Xiang Sun(孙树祥)1, Zhi-Chao Wei(魏志超)2, Peng-Hui Xia(夏鹏辉)1, Wen-Bin Wang(王文斌)1, Zhi-Yong Duan(段智勇)1, Yu-Xiao Li(李玉晓)1, Ying-Hui Zhong(钟英辉)1, Peng Ding(丁芃)3, Zhi Jin(金智)3
摘要: InP-based high electron mobility transistors (HEMTs) will be affected by protons from different directions in space radiation applications. The proton irradiation effects on InAlAs/InGaAs hetero-junction structures of InP-based HEMTs are studied at incident angles ranging from 0 to 89.9° by SRIM software. With the increase of proton incident angle, the change trend of induced vacancy defects in the InAlAs/InGaAs hetero-junction region is consistent with the vacancy energy loss trend of incident protons. Namely, they both have shown an initial increase, followed by a decrease after incident angle has reached 30°. Besides, the average range and ultimate stopping positions of incident protons shift gradually from buffer layer to hetero-junction region, and then go up to gate metal. Finally, the electrical characteristics of InP-based HEMTs are investigated after proton irradiation at different incident angles by Sentaurus-TCAD. The induced vacancy defects are considered self-consistently through solving Poisson's and current continuity equations. Consequently, the extrinsic transconductance, pinch-off voltage and channel current demonstrate the most serious degradation at the incident angle of 30°, which can be accounted for the most severe carrier sheet density reduction under this condition.
中图分类号: (Semiconductor-device characterization, design, and modeling)