中国物理B ›› 2020, Vol. 29 ›› Issue (3): 38502-038502.doi: 10.1088/1674-1056/ab6962
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Ying-Hui Zhong(钟英辉), Bo Yang(杨博), Ming-Ming Chang(常明铭), Peng Ding(丁芃), Liu-Hong Ma(马刘红), Meng-Ke Li(李梦珂), Zhi-Yong Duan(段智勇), Jie Yang(杨洁), Zhi Jin(金智), Zhi-Chao Wei(魏志超)
Ying-Hui Zhong(钟英辉)1, Bo Yang(杨博)1, Ming-Ming Chang(常明铭)1, Peng Ding(丁芃)2, Liu-Hong Ma(马刘红)1, Meng-Ke Li(李梦珂)1, Zhi-Yong Duan(段智勇)1, Jie Yang(杨洁)1, Zhi Jin(金智)2,3, Zhi-Chao Wei(魏志超)3
摘要: An anti-radiation structure of InP-based high electron mobility transistor (HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of InP-based HEMTs. Moreover, direct current (DC) and radio frequency (RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5×1011 cm-2, 1×1012 cm-2, and 5×1012 cm-2. DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5×1012 cm-2. Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.
中图分类号: (Semiconductor-device characterization, design, and modeling)