Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

doi:10.1088/1674-1056/ab5fc4

中国物理B ›› 2020, Vol. 29 ›› Issue (2): 26101-026101.doi: 10.1088/1674-1056/ab5fc4

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

Bing Ye(叶兵), Li-Hua Mo(莫莉华), Tao Liu(刘涛), Jie Luo(罗捷), Dong-Qing Li(李东青), Pei-Xiong Zhao(赵培雄), Chang Cai(蔡畅), Ze He(贺泽), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东), Jie Liu(刘杰)

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China

收稿日期:2019-10-14 修回日期:2019-12-03 出版日期:2020-02-05 发布日期:2020-02-05
通讯作者: Bing Ye, Jie Liu E-mail:yebing@impcas.ac.cn;j.liu@impcas.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11690041 and 11675233) and the Fund from the Science and Technology on Analog Integrated Circuit Laboratory, China (Grant No. JCKY2019210C054).

Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

Bing Ye(叶兵)¹, Li-Hua Mo(莫莉华)^1,2, Tao Liu(刘涛)³, Jie Luo(罗捷)¹, Dong-Qing Li(李东青)^1,2, Pei-Xiong Zhao(赵培雄)^1,2, Chang Cai(蔡畅)^1,2, Ze He(贺泽)^1,2, You-Mei Sun(孙友梅)¹, Ming-Dong Hou(侯明东)¹, Jie Liu(刘杰)¹

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China

Received:2019-10-14 Revised:2019-12-03 Online:2020-02-05 Published:2020-02-05
Contact: Bing Ye, Jie Liu E-mail:yebing@impcas.ac.cn;j.liu@impcas.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11690041 and 11675233) and the Fund from the Science and Technology on Analog Integrated Circuit Laboratory, China (Grant No. JCKY2019210C054).

摘要/Abstract

摘要： Geant4 Monte Carlo simulation results of the single event upset (SEU) induced by protons with energy ranging from 0.3 MeV to 1 GeV are reported. The SEU cross section for planar and three-dimensional (3D) die-stacked SRAM are calculated. The results show that the SEU cross sections of the planar device and the 3D device are different from each other under low energy proton direct ionization mechanism, but almost the same for the high energy proton. Besides, the multi-bit upset (MBU) ratio and pattern are presented and analyzed. The results indicate that the MBU ratio of the 3D die-stacked device is higher than that of the planar device, and the MBU patterns are more complicated. Finally, the on-orbit upset rate for the 3D die-stacked device and the planar device are calculated by SPACE RADIATION software. The calculation results indicate that no matter what the orbital parameters and shielding conditions are, the on-orbit upset rate of planar device is higher than that of 3D die-stacked device.

关键词: 3D-IC, single event upset, Geant4, proton

Abstract: Geant4 Monte Carlo simulation results of the single event upset (SEU) induced by protons with energy ranging from 0.3 MeV to 1 GeV are reported. The SEU cross section for planar and three-dimensional (3D) die-stacked SRAM are calculated. The results show that the SEU cross sections of the planar device and the 3D device are different from each other under low energy proton direct ionization mechanism, but almost the same for the high energy proton. Besides, the multi-bit upset (MBU) ratio and pattern are presented and analyzed. The results indicate that the MBU ratio of the 3D die-stacked device is higher than that of the planar device, and the MBU patterns are more complicated. Finally, the on-orbit upset rate for the 3D die-stacked device and the planar device are calculated by SPACE RADIATION software. The calculation results indicate that no matter what the orbital parameters and shielding conditions are, the on-orbit upset rate of planar device is higher than that of 3D die-stacked device.

Key words: 3D-IC, single event upset, Geant4, proton

中图分类号: (Semiconductors)

61.82.Fk

61.80.Jh (Ion radiation effects) 42.88.+h (Environmental and radiation effects on optical elements, devices, and systems)

叶兵, 莫莉华, 刘涛, 罗捷, 李东青, 赵培雄, 蔡畅, 贺泽, 孙友梅, 侯明东, 刘杰. Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device[J]. 中国物理B, 2020, 29(2): 26101-026101.

Bing Ye(叶兵), Li-Hua Mo(莫莉华), Tao Liu(刘涛), Jie Luo(罗捷), Dong-Qing Li(李东青), Pei-Xiong Zhao(赵培雄), Chang Cai(蔡畅), Ze He(贺泽), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东), Jie Liu(刘杰). Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device[J]. Chin. Phys. B, 2020, 29(2): 26101-026101.

参考文献 17

[1]	Sadaka M, Radu I and Di C L 2010 2010 IEEE International Conference on Integrated Circuit Design and Technology, June 2-4, 2010, Grenoble, France, p. 106
[2]	De M K, De M P, Sabuncuoglu T D, Baert K, Beyne E, Mertens R and Van H C 2005 ESA Round Table Micro/Nano Technol. For Space, January, 2005, Leuven, Belgium
[3]	The 3D-PLUS company homepage: http://www.3d-plus.com
[4]	Zhang W and Li T 2008 Proceedings of the 41st Annual IEEE/ACM International Symposium on Microarchitecture, November 8-12, 2008, Washington, USA, p. 435
[5]	Gouker P M, Tyrrell B, Renzi M, Chen C, Wyatt P, Ahlbin J R, Weeden-Wright S, Atkinson N M, Gaspard N J and Bhuva B L 2011 IEEE Trans. Nucl. Sci. 58 2555 doi: 10.1109/TNS.2011.2172462
[6]	Gouker P M, Tyrrell B, D'Onofrio R, Wyatt P, Soares T, Hu W, Chen C, Schwank J R, Shaneyfelt M R and Blackmore E W 2011 IEEE Trans. Nucl. Sci. 58 2845 doi: 10.1109/TNS.2011.2172463
[7]	Sun H, Ren P, Zheng N, Zhang T and Li T 2011 Microprocess. Microsyst. 35 371 doi: 10.1016/j.micpro.2011.01.004
[8]	Li P, Guo W, Zhao Z and Zhang M 2015 Computer Engineering and Technology (Berlin: Springer) p. 164
[9]	Han H, Chung J and Yang J S 2018 IEEE Trans. Comput. 67 1193
[10]	Song C and Zhang M 2014 Computer Engineering and Technology (Berlin: Springer) p. 176
[11]	Cao X, Xiao L, Huo M, Wang T, Li A, Qi C and Wang J 2016 arXiv: 1608.01345
[12]	Agostinelli S, Allison J, Amako K, Apostolakis J, Araujo H, Arce P, Asai M, Axen D, Banerjee S and Barrand G 2 2003 Nucl. Instrum. Methods Phys. Res. Sect. A-Accel. Spectrom. Dect. Assoc. Equip. 506 250 doi: 10.1016/S0168-9002(03)01368-8
[13]	Heidel D F, Marshall P W, Pellish J A, Rodbell K P, LaBel K A, Schwank J R, Rauch S E, Hakey M C, Berg M D and Castaneda C M 2009 IEEE Trans. Nucl. Sci. 56 3499 doi: 10.1109/TNS.2009.2033796
[14]	Sierawski B D, Pellish J A, Reed R A, Schrimpf R D, Warren K M, Weller R A, Mendenhall M H, Black J D, Tipton A D and Xapsos M A 2009 IEEE Trans. Nucl. Sci. 56 3085 doi: 10.1109/TNS.2009.2032545
[15]	Ye B, Liu J, Wang T S, Liu T Q, Luo J, Wang B, Yin Y N, Ji Q G, Hu P P and Sun Y M 2017 Chin. Phys. B 26 088501 doi: 10.1088/1674-1056/26/8/088501
[16]	The OMERE software homepage: http://www.trad.fr/en/space/omere-software/
[17]	The SPACERAD software homepage: http://www.spacerad.com

Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

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