Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

doi:10.1088/1674-1056/23/11/118503

›› 2014, Vol. 23 ›› Issue (11): 118503-118503.doi: 10.1088/1674-1056/23/11/118503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

肖尧^a, 郭红霞^{a b}, 张凤祁^a, 赵雯^a, 王燕萍^a, 张科营^a, 丁李利^a, 范雪^c, 罗尹虹^a, 王园明^a

a State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China;
b Xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Urumqi 830011, China;
c State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu 61005, China

收稿日期:2014-02-13 修回日期:2014-05-14 出版日期:2014-11-15 发布日期:2014-11-15
基金资助:
Project supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. KFJJ201306).

Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

Xiao Yao (肖尧)^a, Guo Hong-Xia (郭红霞)^{a b}, Zhang Feng-Qi (张凤祁)^a, Zhao Wen (赵雯)^a, Wang Yan-Ping (王燕萍)^a, Zhang Ke-Ying (张科营)^a, Ding Li-Li (丁李利)^a, Fan Xue (范雪)^c, Luo Yin-Hong (罗尹虹)^a, Wang Yuan-Ming (王园明)^a

a State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China;
b Xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Urumqi 830011, China;
c State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu 61005, China

Received:2014-02-13 Revised:2014-05-14 Online:2014-11-15 Published:2014-11-15
Contact: Xiao Yao E-mail:nint_xiaoyao@foxmail.com
Supported by:
Project supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. KFJJ201306).

摘要/Abstract

摘要： Synergistic effects of the total ionizing dose (TID) on the single event upset (SEU) sensitivity in static random access memories (SRAMs) were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.

关键词: single event upset, total dose, static random access memory, imprint effect

Abstract: Synergistic effects of the total ionizing dose (TID) on the single event upset (SEU) sensitivity in static random access memories (SRAMs) were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.

Key words: single event upset, total dose, static random access memory, imprint effect

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

肖尧, 郭红霞, 张凤祁, 赵雯, 王燕萍, 张科营, 丁李利, 范雪, 罗尹虹, 王园明. Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation[J]. , 2014, 23(11): 118503-118503.

Xiao Yao (肖尧), Guo Hong-Xia (郭红霞), Zhang Feng-Qi (张凤祁), Zhao Wen (赵雯), Wang Yan-Ping (王燕萍), Zhang Ke-Ying (张科营), Ding Li-Li (丁李利), Fan Xue (范雪), Luo Yin-Hong (罗尹虹), Wang Yuan-Ming (王园明). Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation[J]. Chin. Phys. B, 2014, 23(11): 118503-118503.

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Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

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