中国物理B ›› 2017, Vol. 26 ›› Issue (4): 47305-047305.doi: 10.1088/1674-1056/26/4/047305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates

Hui Wang(王辉), Ning Wang(王宁), Ling-Li Jiang(蒋苓利), Xin-Peng Lin(林新鹏), Hai-Yue Zhao(赵海月), Hong-Yu Yu(于洪宇)   

  1. 1 Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China;
    2 Shenzhen Key Laborary of the Third Generation Semiconductor, Shenzhen 518055, China
  • 收稿日期:2016-11-01 修回日期:2017-01-08 出版日期:2017-04-05 发布日期:2017-04-05
  • 通讯作者: Hong-Yu Yu E-mail:yuhy@sustc.edu.cn
  • 基金资助:
    Project supported by "Efficient and Energy-Saving GaN on Si Power Devices" Research Fund (Grant No. KQCX20140522151322946), the Research Fund of the Third Generation Semiconductor Key Laboratory of Shenzhen, China (Grant No. ZDSYS20140509142721434), the "Key Technology Research of GaN on Si Power Devices" Research Fund (Grant No. JSGG20140729145956266), and the "Research of Low Cost Fabrication of GaN Power Devices and System Integration" Research Fund (Grant No. JCYJ201602261926390).

A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates

Hui Wang(王辉)1,2, Ning Wang(王宁)1,2, Ling-Li Jiang(蒋苓利)1,2, Xin-Peng Lin(林新鹏)1,2, Hai-Yue Zhao(赵海月)1,2, Hong-Yu Yu(于洪宇)1,2   

  1. 1 Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China;
    2 Shenzhen Key Laborary of the Third Generation Semiconductor, Shenzhen 518055, China
  • Received:2016-11-01 Revised:2017-01-08 Online:2017-04-05 Published:2017-04-05
  • Contact: Hong-Yu Yu E-mail:yuhy@sustc.edu.cn
  • Supported by:
    Project supported by "Efficient and Energy-Saving GaN on Si Power Devices" Research Fund (Grant No. KQCX20140522151322946), the Research Fund of the Third Generation Semiconductor Key Laboratory of Shenzhen, China (Grant No. ZDSYS20140509142721434), the "Key Technology Research of GaN on Si Power Devices" Research Fund (Grant No. JSGG20140729145956266), and the "Research of Low Cost Fabrication of GaN Power Devices and System Integration" Research Fund (Grant No. JCYJ201602261926390).

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摘要： A novel enhancement-mode AlGaN/GaN high electron mobility transistor (HEMT) is proposed and studied. Specifically, several split floating gates (FGs) with negative charges are inserted to the conventional MIS structure. The simulation results revealed that the Vth decreases with the increase of polarization sheet charge density and the tunnel dielectric (between FGs and AlGaN) thickness, while it increases with the increase of FGs sheet charge density and blocking dielectric (between FGs and control gate) thickness. In the case of the same gate length, the Vth will left shift with decreasing FG length. More interestingly, the split FGs could significantly reduce the device failure probability in comparison with the single large area FG structure.

关键词: AlGaN/GaN, high electron mobility transistor, split floating gates, enhancement mode

Abstract: A novel enhancement-mode AlGaN/GaN high electron mobility transistor (HEMT) is proposed and studied. Specifically, several split floating gates (FGs) with negative charges are inserted to the conventional MIS structure. The simulation results revealed that the Vth decreases with the increase of polarization sheet charge density and the tunnel dielectric (between FGs and AlGaN) thickness, while it increases with the increase of FGs sheet charge density and blocking dielectric (between FGs and control gate) thickness. In the case of the same gate length, the Vth will left shift with decreasing FG length. More interestingly, the split FGs could significantly reduce the device failure probability in comparison with the single large area FG structure.

Key words: AlGaN/GaN, high electron mobility transistor, split floating gates, enhancement mode

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
81.05.Ea (III-V semiconductors) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Tv (Field effect devices)