中国物理B ›› 2017, Vol. 26 ›› Issue (4): 47305-047305.doi: 10.1088/1674-1056/26/4/047305
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Hui Wang(王辉), Ning Wang(王宁), Ling-Li Jiang(蒋苓利), Xin-Peng Lin(林新鹏), Hai-Yue Zhao(赵海月), Hong-Yu Yu(于洪宇)
Hui Wang(王辉)1,2, Ning Wang(王宁)1,2, Ling-Li Jiang(蒋苓利)1,2, Xin-Peng Lin(林新鹏)1,2, Hai-Yue Zhao(赵海月)1,2, Hong-Yu Yu(于洪宇)1,2
摘要: A novel enhancement-mode AlGaN/GaN high electron mobility transistor (HEMT) is proposed and studied. Specifically, several split floating gates (FGs) with negative charges are inserted to the conventional MIS structure. The simulation results revealed that the Vth decreases with the increase of polarization sheet charge density and the tunnel dielectric (between FGs and AlGaN) thickness, while it increases with the increase of FGs sheet charge density and blocking dielectric (between FGs and control gate) thickness. In the case of the same gate length, the Vth will left shift with decreasing FG length. More interestingly, the split FGs could significantly reduce the device failure probability in comparison with the single large area FG structure.
中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)