Quantum transport through a Z-shaped silicene nanoribbon

doi:10.1088/1674-1056/26/4/047304

中国物理B ›› 2017, Vol. 26 ›› Issue (4): 47304-047304.doi: 10.1088/1674-1056/26/4/047304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Quantum transport through a Z-shaped silicene nanoribbon

A Ahmadi Fouladi

Department of Physics, Sari Branch, Islamic Azad University, Sari, Iran

收稿日期:2016-11-18 修回日期:2017-01-16 出版日期:2017-04-05 发布日期:2017-04-05
通讯作者: A Ahmadi Fouladi E-mail:a.ahmadifouladi@iausari.ac.ir
基金资助:
Project supported by the Sari Branch, Islamic Azad University, Iran Grant No. 1-24850.

Quantum transport through a Z-shaped silicene nanoribbon

A Ahmadi Fouladi

Department of Physics, Sari Branch, Islamic Azad University, Sari, Iran

Received:2016-11-18 Revised:2017-01-16 Online:2017-04-05 Published:2017-04-05
Contact: A Ahmadi Fouladi E-mail:a.ahmadifouladi@iausari.ac.ir
Supported by:
Project supported by the Sari Branch, Islamic Azad University, Iran Grant No. 1-24850.

摘要/Abstract

摘要： In this work, the electronic transport properties of Z-shaped silicene nanoribbon (ZsSiNR) structure are investigated. The calculations are based on the tight-binding model and Green's function method in Landauer-Büttiker formalism, in which the electronic density of states (DOS), transmission probability, and current-voltage characteristics of the system are calculated, numerically. It is shown that the geometry of the ZsSiNR structure can play an important role to control the electron transport through the system. It is observed that the intensity of electron localization at the edges of the ZsSiNR decreases with the increase of the spin-orbit interaction (SOI) strength. Also, the semiconductor to metallic transition occurs by increasing the SOI strength. The present theoretical results may be useful to design silicene-based devices in nanoelectronics.

关键词: Z-shaped silicene nanoribbon, electronic transport, Green', s function method, spin-orbit interaction

Abstract: In this work, the electronic transport properties of Z-shaped silicene nanoribbon (ZsSiNR) structure are investigated. The calculations are based on the tight-binding model and Green's function method in Landauer-Büttiker formalism, in which the electronic density of states (DOS), transmission probability, and current-voltage characteristics of the system are calculated, numerically. It is shown that the geometry of the ZsSiNR structure can play an important role to control the electron transport through the system. It is observed that the intensity of electron localization at the edges of the ZsSiNR decreases with the increase of the spin-orbit interaction (SOI) strength. Also, the semiconductor to metallic transition occurs by increasing the SOI strength. The present theoretical results may be useful to design silicene-based devices in nanoelectronics.

Key words: Z-shaped silicene nanoribbon, electronic transport, Green's function method, spin-orbit interaction

中图分类号: (Electronic transport in mesoscopic systems)

73.23.-b

73.63.-b (Electronic transport in nanoscale materials and structures)

A Ahmadi Fouladi. Quantum transport through a Z-shaped silicene nanoribbon[J]. 中国物理B, 2017, 26(4): 47304-047304.

A Ahmadi Fouladi. Quantum transport through a Z-shaped silicene nanoribbon[J]. Chin. Phys. B, 2017, 26(4): 47304-047304.

参考文献 27

[1]	Vogt P, De Padova P, Quaresima C, Avila J, Frantzeskakis E, Asensio M C, Resta A, Ealet B and Le Lay G 2012 Phys. Rev. Lett. 15 155501
[2]	Aufray B, Kara A, Vizzini S, Oughaddou H, Léandri C, Ealet B and Le Lay G 2010 Appl. Phys. Lett. 96 183102
[3]	Lalmi B, Oughaddou H, Enriquez H, Kara A, Vizzini S, Ealet B and Aufray B 2010 Appl. Phys. Lett. 97 223109
[4]	Lin C L, Arafune R, Kawahara K, Tsukahara N, Minamitani E, Kim Y, Takagi N and Kawai M 2012 Appl. Phys. Express 5 045802
[5]	Tao L, Cinquanta E, Chiappe D, Grazianetti C, Fanciulli M, Dubey M, Molle A and Akinwande D 2015 Nat. Nano 10 227
[6]	Liu C C, Feng W and Yao Y 2011 Phys. Rev. Lett. 107 076802
[7]	Ezawa M 2012 New J. Phys. 14 033003
[8]	Ding Y and Ni J 2009 Appl. Phys. Lett. 95 083115
[9]	Han M Y, Ozyilmaz B, Zhang Y and Kim P 2007 Phys. Rev. Lett. 98 206805
[10]	Chen Y P, Xie Y E and Zhong J 2008 Phys. Lett. A 372 5928
[11]	Chen Y P, Xie Y E and Yan X H 2008 J. Appl. Phys. 103 063711
[12]	Chen Y P, Xie Y E, Sun L Z and Zhong J 2008 Appl. Phys. Lett. 93 092104
[13]	Zhang Z Z, Wu Z H, Chang K and Peeters F M 2009 Nanotechnology 20 415203
[14]	Li H, Liu N, Zheng Y, Wang F and Hao H 2010 Physica B: Conden. Matter 405 3316
[15]	Xu J G, Wang L and Weng M Q 2013 J. Appl. Phys. 114 153701
[16]	Tong H and Wu M W 2012 Phys. Rev. B 85(20) 205433
[17]	Ahmadi Fouladi A and Ketabi S 2015 Physica E: Low-dimensional Systems and Nanostructures 74 475
[18]	Ahmadi Fouladi A 2016 Superlattices and Microstructures 95 108-114
[19]	Zhou B, Zhou B, Zeng Y, Zhou G and Duan M 2016 Phys. Lett. A 380 1469
[20]	Zhou B, Zhou B, Zeng Y, Zhou G and Duan M 2016 Phys. Lett. A 380 282
[21]	Wang X S, Shen M, An X T and Liu J J 2016 Phys. Lett. A 380 1663
[22]	Trivedi S, Srivastava A and Kurchania R 2014 J. Comput. Theor. Nanosci. 11 789
[23]	Shakouri Kh, Simchi H, Esmaeilzadeh M, Mazidabadi H, and Peeters F M 2015 Phys. Rev. B 92 035413
[24]	Datta S 1995 Electronic Transport in Mesoscopic Systems (Cambridge: Cambridge University Press)
[25]	Sancho M P L, Sancho J M L, Sancho J M L and Rubio J 1985 J. Phys. F: Met. Phys. 15 851
[26]	Liu C C, Jiang H and Yao Y 2011 Phys. Rev. B 84 195430
[27]	Ezawa M and Nagaosa N 2013 Phys. Rev. B 88 121401

Quantum transport through a Z-shaped silicene nanoribbon

Quantum transport through a Z-shaped silicene nanoribbon

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