A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates
王辉, 王宁, 蒋苓利, 林新鹏, 赵海月, 于洪宇
A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates
Hui Wang(王辉), Ning Wang(王宁), Ling-Li Jiang(蒋苓利), Xin-Peng Lin(林新鹏), Hai-Yue Zhao(赵海月), Hong-Yu Yu(于洪宇)
中国物理B
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2017, (4): 47305
-047305
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DOI: 10.1088/1674-1056/26/4/047305