中国物理B ›› 2016, Vol. 25 ›› Issue (5): 57304-057304.doi: 10.1088/1674-1056/25/5/057304
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Wei Huang(黄巍), Chao Lu(陆超), Jue Yu(余珏), Jiang-Bin Wei(魏江镔), Chao-Wen Chen(陈超文), Jian-Yuan Wang(汪建元), Jian-Fang Xu(徐剑芳), Chen Wang(王尘), Cheng Li(李成), Song-Yan Chen(陈松岩), Chun-Li Liu(刘春莉), Hong-Kai Lai(赖虹凯)
Wei Huang(黄巍)1, Chao Lu(陆超)1, Jue Yu(余珏)1, Jiang-Bin Wei(魏江镔)1, Chao-Wen Chen(陈超文)1, Jian-Yuan Wang(汪建元)1, Jian-Fang Xu(徐剑芳)1, Chen Wang(王尘)2, Cheng Li(李成)1, Song-Yan Chen(陈松岩)1, Chun-Li Liu(刘春莉)3, Hong-Kai Lai(赖虹凯)1
摘要: High-performance Ge n+/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal(nickel)-induced dopant activation technique. The obtained NiGe electroded Ge n+/p junction has a rectification ratio of 5.6×104 and a forward current of 387 A/cm2 at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET.
中图分类号: (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)