中国物理B ›› 2016, Vol. 25 ›› Issue (6): 66601-066601.doi: 10.1088/1674-1056/25/6/066601
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
Shi-Hao Huang(黄诗浩), Cheng Li(李成), Cheng-Zhao Chen(陈城钊), Chen Wang(王尘), Wen-Ming Xie(谢文明), Shu-Yi Lin(林抒毅), Ming Shao(邵明), Ming-Xing Nie(聂明星), Cai-Yun Chen(陈彩云)
Shi-Hao Huang(黄诗浩)1, Cheng Li(李成)2, Cheng-Zhao Chen(陈城钊)3, Chen Wang(王尘)2, Wen-Ming Xie(谢文明)1, Shu-Yi Lin(林抒毅)1, Ming Shao(邵明)1, Ming-Xing Nie(聂明星)1, Cai-Yun Chen(陈彩云)1
摘要:
The properties of n-Ge epilayer deposited on Si substrate with in-situ doping technology in a cold-wall ultrahigh vacuum chemical vapor deposition (UHVCVD) system are investigated. The growth temperature of ~500℃ is optimal for the n-Ge growth in our equipment with a phosphorus concentration of ~1018 cm-3. In the n-Ge epilayer, the depth profile of phosphorus concentration is box-shaped and the tensile strain of 0.12% confirmed by x-ray diffraction measurement is introduced which results in the red shift of the photoluminescence. The enhancements of photoluminescence intensity with the increase of the doping concentration are observed, which is consistent with the modeling of the spontaneous emission spectrum for direct transition of Ge. The results are of significance for guiding the growth of n-Ge epilayer with in-situ doping technology.
中图分类号: (Diffusion of impurities ?)