中国物理B ›› 2016, Vol. 25 ›› Issue (5): 57304-057304.doi: 10.1088/1674-1056/25/5/057304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

Wei Huang(黄巍), Chao Lu(陆超), Jue Yu(余珏), Jiang-Bin Wei(魏江镔), Chao-Wen Chen(陈超文), Jian-Yuan Wang(汪建元), Jian-Fang Xu(徐剑芳), Chen Wang(王尘), Cheng Li(李成), Song-Yan Chen(陈松岩), Chun-Li Liu(刘春莉), Hong-Kai Lai(赖虹凯)   

  1. 1. Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;
    2. Xiamen University of Technology, Xiamen 361005, China;
    3. Department of Physics and Oxide Research Center, Hankuk University of Foreign Studies, Yongin 449-791, Korea
  • 收稿日期:2015-12-03 修回日期:2016-01-26 出版日期:2016-05-05 发布日期:2016-05-05
  • 通讯作者: Wei Huang E-mail:weihuang@xmu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61176092 and 61474094), the National Basic Research Program of China (Grant Nos. 2012CB933503 and 2013CB632103), and the National Natural Science Foundation of China-National Research Foundation of Korea Joint Research Project (Grant No. 11311140251).

High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

Wei Huang(黄巍)1, Chao Lu(陆超)1, Jue Yu(余珏)1, Jiang-Bin Wei(魏江镔)1, Chao-Wen Chen(陈超文)1, Jian-Yuan Wang(汪建元)1, Jian-Fang Xu(徐剑芳)1, Chen Wang(王尘)2, Cheng Li(李成)1, Song-Yan Chen(陈松岩)1, Chun-Li Liu(刘春莉)3, Hong-Kai Lai(赖虹凯)1   

  1. 1. Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;
    2. Xiamen University of Technology, Xiamen 361005, China;
    3. Department of Physics and Oxide Research Center, Hankuk University of Foreign Studies, Yongin 449-791, Korea
  • Received:2015-12-03 Revised:2016-01-26 Online:2016-05-05 Published:2016-05-05
  • Contact: Wei Huang E-mail:weihuang@xmu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61176092 and 61474094), the National Basic Research Program of China (Grant Nos. 2012CB933503 and 2013CB632103), and the National Natural Science Foundation of China-National Research Foundation of Korea Joint Research Project (Grant No. 11311140251).

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摘要： High-performance Ge n+/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal(nickel)-induced dopant activation technique. The obtained NiGe electroded Ge n+/p junction has a rectification ratio of 5.6×104 and a forward current of 387 A/cm2 at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET.

关键词: germanium, metal-induced dopant activation, NiGe, n+/P junction

Abstract: High-performance Ge n+/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal(nickel)-induced dopant activation technique. The obtained NiGe electroded Ge n+/p junction has a rectification ratio of 5.6×104 and a forward current of 387 A/cm2 at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET.

Key words: germanium, metal-induced dopant activation, NiGe, n+/P junction

中图分类号:  (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Lq
61.72.uf (Ge and Si) 85.40.Ry (Impurity doping, diffusion and ion implantation technology) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)