Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing

doi:10.1088/1674-1056/ac6db3

中国物理B ›› 2022, Vol. 31 ›› Issue (9): 98503-098503.doi: 10.1088/1674-1056/ac6db3

Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing

Chen Wang(王尘)^1,†, Wei-Hang Fan(范伟航)¹, Yi-Hong Xu(许怡红)¹, Yu-Chao Zhang(张宇超)¹, Hui-Chen Fan(范慧晨)¹, Cheng Li(李成)², and Song-Yan Cheng(陈松岩)²

1 Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Opto-electronic and Communiction Engineering, Xiamen University of Technology, Xiamen 361024, China;
2 Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China

收稿日期:2022-03-31 修回日期:2022-04-20 接受日期:2022-05-07 出版日期:2022-08-19 发布日期:2022-08-24
通讯作者: Chen Wang E-mail:chenwang@xmut.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61904155), the Science and technology Project of Fujian Provincial Department of Education, China (Grant No. JAT200484), the Natural Science Foundation of Fujian Province, China (Grant No. 2018J05115), and the Scientific Research Projects of Xiamen University of Technology, China (Grant No. YKJCX2020078).

Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing

Chen Wang(王尘)^1,†, Wei-Hang Fan(范伟航)¹, Yi-Hong Xu(许怡红)¹, Yu-Chao Zhang(张宇超)¹, Hui-Chen Fan(范慧晨)¹, Cheng Li(李成)², and Song-Yan Cheng(陈松岩)²

1 Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Opto-electronic and Communiction Engineering, Xiamen University of Technology, Xiamen 361024, China;
2 Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China

Received:2022-03-31 Revised:2022-04-20 Accepted:2022-05-07 Online:2022-08-19 Published:2022-08-24
Contact: Chen Wang E-mail:chenwang@xmut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61904155), the Science and technology Project of Fujian Provincial Department of Education, China (Grant No. JAT200484), the Natural Science Foundation of Fujian Province, China (Grant No. 2018J05115), and the Scientific Research Projects of Xiamen University of Technology, China (Grant No. YKJCX2020078).

摘要/Abstract

摘要： The diffusion and the activation of phosphorus in phosphorus and fluorine co-implanted Ge after being annealed by excimer laser are investigated. The results prove that the fluorine element plays an important role in suppressing phosphorus diffusion and enhancing phosphorus activation. Moreover, the rapid thermal annealing process is utilized to evaluate and verify the role of fluorine element. During the initial annealing of co-implanted Ge, it is easier to form high bonding energy F_nV_m clusters which can stabilize the excess vacancies, resulting in the reduced vacancy-assisted diffusion of phosphorus. The maximum activation concentration of about 4.4×10²⁰ cm^-3 with a reduced diffusion length and dopant loss is achieved in co-implanted Ge that is annealed at a tailored laser fluence of 175 mJ/cm². The combination of excimer laser annealing and co-implantation technique provides a reference and guideline for high level n-type doping in Ge and is beneficial to its applications in the scaled Ge MOSFET technology and other devices.

关键词: phosphorus diffusion, activation concentration, co-implanted fluorine, germanium, excimer laser annealing

Abstract: The diffusion and the activation of phosphorus in phosphorus and fluorine co-implanted Ge after being annealed by excimer laser are investigated. The results prove that the fluorine element plays an important role in suppressing phosphorus diffusion and enhancing phosphorus activation. Moreover, the rapid thermal annealing process is utilized to evaluate and verify the role of fluorine element. During the initial annealing of co-implanted Ge, it is easier to form high bonding energy F_nV_m clusters which can stabilize the excess vacancies, resulting in the reduced vacancy-assisted diffusion of phosphorus. The maximum activation concentration of about 4.4×10²⁰ cm^-3 with a reduced diffusion length and dopant loss is achieved in co-implanted Ge that is annealed at a tailored laser fluence of 175 mJ/cm². The combination of excimer laser annealing and co-implantation technique provides a reference and guideline for high level n-type doping in Ge and is beneficial to its applications in the scaled Ge MOSFET technology and other devices.

Key words: phosphorus diffusion, activation concentration, co-implanted fluorine, germanium, excimer laser annealing

中图分类号: (Impurity doping, diffusion and ion implantation technology)

85.40.Ry

81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization) 52.38.Mf (Laser ablation)

Chen Wang(王尘), Wei-Hang Fan(范伟航), Yi-Hong Xu(许怡红), Yu-Chao Zhang(张宇超), Hui-Chen Fan(范慧晨), Cheng Li(李成), and Song-Yan Cheng(陈松岩). Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing[J]. 中国物理B, 2022, 31(9): 98503-098503.

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Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing

Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing

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