中国物理B ›› 2019, Vol. 28 ›› Issue (7): 76103-076103.doi: 10.1088/1674-1056/28/7/076103

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Micron-sized diamond particles containing Ge-V and Si-V color centers

Hang-Cheng Zhang(章航程), Cheng-Ke Chen(陈成克), Ying-Shuang Mei(梅盈爽), Xiao Li(李晓), Mei-Yan Jiang(蒋梅燕), Xiao-Jun Hu(胡晓君)   

  1. College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China
  • 收稿日期:2019-04-04 修回日期:2019-04-24 出版日期:2019-07-05 发布日期:2019-07-05
  • 通讯作者: Xiao-Jun Hu E-mail:huxj@zjut.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 50972129 and 50602039), the Natural Science Foundation of Zhejiang Province, China (Grant Nos. LQ15A040004 and LY18E020013), the International Science Technology Cooperation Program of China (Grant No. 2014DFR51160), the National Key Research and Development Program of China (Grant No. 2016YFE0133200), European Union's Horizon 2020 Research and Innovation Staff Exchange (RISE) Scheme (Grant No. 734578), One Belt and One Road International Cooperation Project from Key Research and Development Program of Zhejiang Province, China (Grant No. 2018C04021), and the Key Project of the National Natural Science Foundation of China (Grant No. U1809210).

Micron-sized diamond particles containing Ge-V and Si-V color centers

Hang-Cheng Zhang(章航程), Cheng-Ke Chen(陈成克), Ying-Shuang Mei(梅盈爽), Xiao Li(李晓), Mei-Yan Jiang(蒋梅燕), Xiao-Jun Hu(胡晓君)   

  1. College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China
  • Received:2019-04-04 Revised:2019-04-24 Online:2019-07-05 Published:2019-07-05
  • Contact: Xiao-Jun Hu E-mail:huxj@zjut.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 50972129 and 50602039), the Natural Science Foundation of Zhejiang Province, China (Grant Nos. LQ15A040004 and LY18E020013), the International Science Technology Cooperation Program of China (Grant No. 2014DFR51160), the National Key Research and Development Program of China (Grant No. 2016YFE0133200), European Union's Horizon 2020 Research and Innovation Staff Exchange (RISE) Scheme (Grant No. 734578), One Belt and One Road International Cooperation Project from Key Research and Development Program of Zhejiang Province, China (Grant No. 2018C04021), and the Key Project of the National Natural Science Foundation of China (Grant No. U1809210).

RichHTML

0

PDF (PC)

152

赞

摘要：

Micron-sized diamond particles containing germanium-vacancy (Ge-V) color centers with a zero-photon line (ZPL) around 602.3 nm are successfully grown using hot filament chemical vapor deposition. The crystal morphology changes from icosahedron to truncated octahedron and decahedron, finally becomes spherical with the growth pressure increase. Due to the chamber containing Si, all diamond particles contain silicon-vacancy (Si-V) color centers. High growth pressure contributes to the formation of Ge-V and Si-V in diamonds. With prolonging growth time, the change in the full width at half maximum (FWHM) of the diamond peak is small, which shows that the concentration of Ge-V and Si-V centers nearly maintains a constant. The FWHM of the Ge-V ZPL is around 4 nm, which is smaller than that reported, suggesting that the Ge-V center has a more perfect structure. Ge-V and Si-V photoluminescence (PL) intensities increase with the prolonging growth time due to the increased diamond content and reduced content of sp2-bonded carbon and trans-polyacetylene. In summary, increasing the growth pressure and prolonging the growth time are beneficial to enhance the Ge-V and Si-V PL intensities.

关键词: diamond, germanium-vacancy, silicon-vacancy, photoluminescence

Abstract:

Micron-sized diamond particles containing germanium-vacancy (Ge-V) color centers with a zero-photon line (ZPL) around 602.3 nm are successfully grown using hot filament chemical vapor deposition. The crystal morphology changes from icosahedron to truncated octahedron and decahedron, finally becomes spherical with the growth pressure increase. Due to the chamber containing Si, all diamond particles contain silicon-vacancy (Si-V) color centers. High growth pressure contributes to the formation of Ge-V and Si-V in diamonds. With prolonging growth time, the change in the full width at half maximum (FWHM) of the diamond peak is small, which shows that the concentration of Ge-V and Si-V centers nearly maintains a constant. The FWHM of the Ge-V ZPL is around 4 nm, which is smaller than that reported, suggesting that the Ge-V center has a more perfect structure. Ge-V and Si-V photoluminescence (PL) intensities increase with the prolonging growth time due to the increased diamond content and reduced content of sp2-bonded carbon and trans-polyacetylene. In summary, increasing the growth pressure and prolonging the growth time are beneficial to enhance the Ge-V and Si-V PL intensities.

Key words: diamond, germanium-vacancy, silicon-vacancy, photoluminescence

中图分类号:  (Color centers)

  • 61.72.jn
78.55.-m (Photoluminescence, properties and materials) 81.05.ug (Diamond)