High-speed waveguide-integrated Ge/Si avalanche photodetector

doi:10.1088/1674-1056/25/5/058503

中国物理B ›› 2016, Vol. 25 ›› Issue (5): 58503-058503.doi: 10.1088/1674-1056/25/5/058503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

High-speed waveguide-integrated Ge/Si avalanche photodetector

Hui Cong(丛慧), Chunlai Xue(薛春来), Zhi Liu(刘智), Chuanbo Li(李传波), Buwen Cheng(步成文), Qiming Wang(王启明)

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2015-09-18 修回日期:2016-01-11 出版日期:2016-05-05 发布日期:2016-05-05
通讯作者: Chunlai Xue E-mail:clxue@semi.ac.cn
基金资助:
Project supported by the National State Basic Research Program of China (Grant No. 2013CB632103) and the National Natural Science Foundation of China (Grant Nos. 61177038, 61377045, and 61176013).

High-speed waveguide-integrated Ge/Si avalanche photodetector

Hui Cong(丛慧), Chunlai Xue(薛春来), Zhi Liu(刘智), Chuanbo Li(李传波), Buwen Cheng(步成文), Qiming Wang(王启明)

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2015-09-18 Revised:2016-01-11 Online:2016-05-05 Published:2016-05-05
Contact: Chunlai Xue E-mail:clxue@semi.ac.cn
Supported by:
Project supported by the National State Basic Research Program of China (Grant No. 2013CB632103) and the National Natural Science Foundation of China (Grant Nos. 61177038, 61377045, and 61176013).

摘要/Abstract

摘要： Waveguide-integrated Ge/Si heterostructure avalanche photodetectors (APDs) were designed and fabricated using a CMOS-compatible process on 8-inch SOI substrate. The structure of the APD was designed as separate-absorption-charge-multiplication (SACM) using germanium and silicon as absorption region and multiplication region, respectively. The breakdown voltage (V_b) of such a device is 19 V at reverse bias and dark current appears to be 0.71 μA at 90% of the V_b. The device with a 10-μ length and 7-μ width of Ge layer shows a maximum 3-dB bandwidth of 17.8 GHz at the wavelength of 1550 nm. For the device with a 30-μ-length Ge region, gain-bandwidth product achieves 325 GHz.

关键词: waveguide, germanium, photodetector

Abstract: Waveguide-integrated Ge/Si heterostructure avalanche photodetectors (APDs) were designed and fabricated using a CMOS-compatible process on 8-inch SOI substrate. The structure of the APD was designed as separate-absorption-charge-multiplication (SACM) using germanium and silicon as absorption region and multiplication region, respectively. The breakdown voltage (V_b) of such a device is 19 V at reverse bias and dark current appears to be 0.71 μA at 90% of the V_b. The device with a 10-μ length and 7-μ width of Ge layer shows a maximum 3-dB bandwidth of 17.8 GHz at the wavelength of 1550 nm. For the device with a 30-μ-length Ge region, gain-bandwidth product achieves 325 GHz.

Key words: waveguide, germanium, photodetector

中图分类号: (Photodetectors (including infrared and CCD detectors))

85.60.Gz

85.30.De (Semiconductor-device characterization, design, and modeling) 95.55.Aq (Charge-coupled devices, image detectors, and IR detector arrays)

丛慧, 薛春来, 刘智, 李传波, 步成文, 王启明. High-speed waveguide-integrated Ge/Si avalanche photodetector[J]. 中国物理B, 2016, 25(5): 58503-058503.

Hui Cong(丛慧), Chunlai Xue(薛春来), Zhi Liu(刘智), Chuanbo Li(李传波), Buwen Cheng(步成文), Qiming Wang(王启明). High-speed waveguide-integrated Ge/Si avalanche photodetector[J]. Chin. Phys. B, 2016, 25(5): 58503-058503.

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High-speed waveguide-integrated Ge/Si avalanche photodetector

High-speed waveguide-integrated Ge/Si avalanche photodetector

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