中国物理B ›› 2015, Vol. 24 ›› Issue (5): 56801-056801.doi: 10.1088/1674-1056/24/5/056801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Pattern transition from nanohoneycomb to nanograss on germanium by gallium ion bombardment

郑晓虎a, 张苗a, 黄安平b, 肖志松b, 朱剑豪c, 王曦a, 狄增峰a   

  1. a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    b Department of Physics, Beihang University, Beijing 100191, China;
    c Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China
  • 收稿日期:2014-12-01 修回日期:2014-12-30 出版日期:2015-05-05 发布日期:2015-05-05
  • 基金资助:
    Project Project of Shanghai, China (Grant No. 11PJ1411700), the Hong Kong Research Grants Council (RGC) General Research Funds (GRF), China (Grant No. 112212), the City University of Hong Kong of Hong Kong Applied Research Grant (ARG), China (Grant No. 9667066), and the International Collaboration and Innovation Program on High Mobility Materials Engineering of Chinese Academy of Sciences.

Pattern transition from nanohoneycomb to nanograss on germanium by gallium ion bombardment

Zheng Xiao-Hu (郑晓虎)a, Zhang Miao (张苗)a, Huang An-Ping (黄安平)b, Xiao Zhi-Song (肖志松)b, Paul K Chu (朱剑豪)c, Wang Xi (王曦)a, Di Zeng-Feng (狄增峰)a   

  1. a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    b Department of Physics, Beihang University, Beijing 100191, China;
    c Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China
  • Received:2014-12-01 Revised:2014-12-30 Online:2015-05-05 Published:2015-05-05
  • Contact: Di Zeng-Feng E-mail:zfdi@mail.sim.ac.cn
  • About author:68.35.bg; 78.55.Mb; 68.37.Ps
  • Supported by:
    Project Project of Shanghai, China (Grant No. 11PJ1411700), the Hong Kong Research Grants Council (RGC) General Research Funds (GRF), China (Grant No. 112212), the City University of Hong Kong of Hong Kong Applied Research Grant (ARG), China (Grant No. 9667066), and the International Collaboration and Innovation Program on High Mobility Materials Engineering of Chinese Academy of Sciences.

摘要: During the irradiation of Ge surface with Ga+ ions up to 1017 ions·cm-2, various patterns from ordered honeycomb to nanograss structure appear to be decided by the ion beam energy. The resulting surface morphologies have been studied by scanning electron microscopy and atomic force microscopy. For high energy Ga+ irradiation (16–30 keV), by controlling the ion fluence, we have captured that the equilibrium nanograss morphology also originates from the ordered honeycomb structure. When honeycomb holes are formed by ion erosion, heterogeneous distribution of the deposited energy along the holes leads to viscous flow from the bottom to the plateau. Redistribution of target atoms results in the growth of protuberances on the plateau, and finally the pattern evolution from honeycomb to nanograss with an equilibrium condition.

关键词: ion beam technology, germanium, nanopatterns

Abstract: During the irradiation of Ge surface with Ga+ ions up to 1017 ions·cm-2, various patterns from ordered honeycomb to nanograss structure appear to be decided by the ion beam energy. The resulting surface morphologies have been studied by scanning electron microscopy and atomic force microscopy. For high energy Ga+ irradiation (16–30 keV), by controlling the ion fluence, we have captured that the equilibrium nanograss morphology also originates from the ordered honeycomb structure. When honeycomb holes are formed by ion erosion, heterogeneous distribution of the deposited energy along the holes leads to viscous flow from the bottom to the plateau. Redistribution of target atoms results in the growth of protuberances on the plateau, and finally the pattern evolution from honeycomb to nanograss with an equilibrium condition.

Key words: ion beam technology, germanium, nanopatterns

中图分类号:  (Semiconductors)

  • 68.35.bg
78.55.Mb (Porous materials) 68.37.Ps (Atomic force microscopy (AFM))