中国物理B ›› 2015, Vol. 24 ›› Issue (3): 38502-038502.doi: 10.1088/1674-1056/24/3/038502
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
High performance silicon waveguide germanium photodetector
李冲a b, 薛春来a, 李亚明a, 李传波a, 成步文a, 王启明a
- a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
High performance silicon waveguide germanium photodetector
Li Chong (李冲)a b, Xue Chun-Lai (薛春来)a, Li Ya-Ming (李亚明)a, Li Chuan-Bo (李传波)a, Cheng Bu-Wen (成步文)a, Wang Qi-Ming (王启明)a
- a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
摘要：
High-performance Ge-on-SOI p-i-n waveguide photodetectors with different sizes were fabricated. The performances, in terms of dark-current, photo current responsivity and 3-dB bandwidth, were well studied. A responsivity of 0.842 A/W at 1550 nm and dark current of 70 nA was measured from this detector at -1 V. The detector with a size of 4 μm× 10 μm demonstrated an optical band width of 19 GHz at -5 V for 1550 nm. Both the experimental results and the finite-difference time domain simulation show that, when the device size is above a certain threshold, the absorption is not sensitively dependent on such designing parameters as the width and length of the photodetector.
中图分类号: (Photodetectors (including infrared and CCD detectors))
- 85.60.Gz