High-performance germanium n
+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature
黄巍, 陆超, 余珏, 魏江镔, 陈超文, 汪建元, 徐剑芳, 王尘, 李成, 陈松岩, 刘春莉, 赖虹凯
High-performance germanium n
+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature
Wei Huang(黄巍), Chao Lu(陆超), Jue Yu(余珏), Jiang-Bin Wei(魏江镔), Chao-Wen Chen(陈超文), Jian-Yuan Wang(汪建元), Jian-Fang Xu(徐剑芳), Chen Wang(王尘), Cheng Li(李成), Song-Yan Chen(陈松岩), Chun-Li Liu(刘春莉), Hong-Kai Lai(赖虹凯)
中国物理B
.
2016, (5): 57304
-057304
.
DOI: 10.1088/1674-1056/25/5/057304