Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

doi:10.1088/1674-1056/25/4/048504

中国物理B ›› 2016, Vol. 25 ›› Issue (4): 48504-048504.doi: 10.1088/1674-1056/25/4/048504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

Yang Liu(刘阳), Chang-Chun Chai(柴常春), Yin-Tang Yang(杨银堂), Jing Sun(孙静), Zhi-Peng Li(李志鹏)

1 Ministry of Education Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;
2 Space Payload System Innovation Center, China Academy of Space Technology, Xi'an 710100, China

收稿日期:2015-12-02 修回日期:2015-12-26 出版日期:2016-04-05 发布日期:2016-04-05
通讯作者: Yang Liu E-mail:yyliu1987@163.com
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (Grant No. 2015-0214.XY.K).

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

Yang Liu(刘阳)¹, Chang-Chun Chai(柴常春)¹, Yin-Tang Yang(杨银堂)¹, Jing Sun(孙静)², Zhi-Peng Li(李志鹏)²

1 Ministry of Education Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;
2 Space Payload System Innovation Center, China Academy of Space Technology, Xi'an 710100, China

Received:2015-12-02 Revised:2015-12-26 Online:2016-04-05 Published:2016-04-05
Contact: Yang Liu E-mail:yyliu1987@163.com
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (Grant No. 2015-0214.XY.K).

摘要/Abstract

摘要： In this paper, we present the damage effect and mechanism of high power microwave (HPM) on AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (pHEMT) of low-noise amplifier (LNA). A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS). Experimental results accord well with the simulation of our model.

关键词: low noise amplifier, HEMT, high power microwave, damage effect

Abstract: In this paper, we present the damage effect and mechanism of high power microwave (HPM) on AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (pHEMT) of low-noise amplifier (LNA). A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS). Experimental results accord well with the simulation of our model.

Key words: low noise amplifier, HEMT, high power microwave, damage effect

中图分类号: (Field effect devices)

85.30.Tv

84.40.-x (Radiowave and microwave (including millimeter wave) technology)

刘阳, 柴常春, 杨银堂, 孙静, 李志鹏. Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave[J]. 中国物理B, 2016, 25(4): 48504-048504.

Yang Liu(刘阳), Chang-Chun Chai(柴常春), Yin-Tang Yang(杨银堂), Jing Sun(孙静), Zhi-Peng Li(李志鹏). Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave[J]. Chin. Phys. B, 2016, 25(4): 48504-048504.

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Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

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