Modulation of WNx/Ge Schottky barrier height by varying N composition of tungsten nitride

doi:10.1088/1674-1056/24/7/077306

中国物理B ›› 2015, Vol. 24 ›› Issue (7): 77306-077306.doi: 10.1088/1674-1056/24/7/077306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Modulation of WN_x/Ge Schottky barrier height by varying N composition of tungsten nitride

魏江镔^a, 池晓伟^a, 陆超^a, 王尘^a, 林光杨^a, 吴焕达^a, 黄巍^a, 李成^a, 陈松岩^a, 刘春莉^b

a Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;
b Department of Physics, Hankuk University of Foreign Studies, Yongin 449-791, Korea

收稿日期:2014-12-22 修回日期:2015-02-02 出版日期:2015-07-05 发布日期:2015-07-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61176092 and 61474094), the National Basic Research Program of China (Grant Nos. 2012CB933503 and 2012CB632103), and the National Natural Science Foundation of China-National Research Foundation of Korea Joint Research Project (Grant No. 11311140251).

Modulation of WN_x/Ge Schottky barrier height by varying N composition of tungsten nitride

Wei Jiang-Bin (魏江镔)^a, Chi Xiao-Wei (池晓伟)^a, Lu Chao (陆超)^a, Wang Chen (王尘)^a, Lin Guang-Yang (林光杨)^a, Wu Huan-Da (吴焕达)^a, Huang Wei (黄巍)^a, Li Cheng (李成)^a, Chen Song-Yan (陈松岩)^a, Liu Chun-Li (刘春莉)^b

a Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;
b Department of Physics, Hankuk University of Foreign Studies, Yongin 449-791, Korea

Received:2014-12-22 Revised:2015-02-02 Online:2015-07-05 Published:2015-07-05
Contact: Huang Wei, Li Cheng E-mail:weihuang@xmu.edu.cn;lich@xmu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61176092 and 61474094), the National Basic Research Program of China (Grant Nos. 2012CB933503 and 2012CB632103), and the National Natural Science Foundation of China-National Research Foundation of Korea Joint Research Project (Grant No. 11311140251).

摘要/Abstract

摘要： Modulation of the Schottky barrier heights was successfully demonstrated for WN_x/p-Ge and WN_x/n-Ge contacts by increasing the nitrogen component in the WN_x films. The WN_0.38/p-Ge contact exhibits rectifying characteristic and an apparent Schottky barrier of 0.49 eV while the WN_0.38/n-Ge Schottky contact exhibits quasi-Ohmic current–voltage characteristics. Dipoles formed at the contact interface by the difference of the Pauling electronegativities of Ge and N are confirmed to alleviate the Fermi-level pinning effect.

关键词: germanium, Fermi-level pinning, Schottky barrier height modulation, tungsten nitride

Abstract: Modulation of the Schottky barrier heights was successfully demonstrated for WN_x/p-Ge and WN_x/n-Ge contacts by increasing the nitrogen component in the WN_x films. The WN_0.38/p-Ge contact exhibits rectifying characteristic and an apparent Schottky barrier of 0.49 eV while the WN_0.38/n-Ge Schottky contact exhibits quasi-Ohmic current–voltage characteristics. Dipoles formed at the contact interface by the difference of the Pauling electronegativities of Ge and N are confirmed to alleviate the Fermi-level pinning effect.

Key words: germanium, Fermi-level pinning, Schottky barrier height modulation, tungsten nitride

中图分类号: (Metal-semiconductor-metal structures)

73.40.Sx

73.40.Ei (Rectification) 73.61.At (Metal and metallic alloys)

魏江镔, 池晓伟, 陆超, 王尘, 林光杨, 吴焕达, 黄巍, 李成, 陈松岩, 刘春莉. Modulation of WN_x/Ge Schottky barrier height by varying N composition of tungsten nitride[J]. 中国物理B, 2015, 24(7): 77306-077306.

Wei Jiang-Bin (魏江镔), Chi Xiao-Wei (池晓伟), Lu Chao (陆超), Wang Chen (王尘), Lin Guang-Yang (林光杨), Wu Huan-Da (吴焕达), Huang Wei (黄巍), Li Cheng (李成), Chen Song-Yan (陈松岩), Liu Chun-Li (刘春莉). Modulation of WN_x/Ge Schottky barrier height by varying N composition of tungsten nitride[J]. Chin. Phys. B, 2015, 24(7): 77306-077306.

参考文献 19

[1]	Hashemi P, Chern W, Lee H S, Teherani J T, Zhu Y, Gonsalvez J, Shahidi G G and Hoyt J L 2012 IEEE Electron Device Lett. 33 943
[2]	Koike M, Kamata Y, Ino T, Hagishima D, Tatsumura K, Koyama M and Nishiyama A 2008 J. Appl. Phys. 104 023523
[3]	Dimoulas A, Tsipas P, Sotiropoulos A and Evangelou E K 2006 Appl. Phys. Lett. 89 252110
[4]	Lin J Y J, Roy A M, Nainani A, Sun Y and Saraswat K C 2011 Appl. Phys. Lett. 98 092113
[5]	Gajula D R, Baine P, Modreanu M, Hurley P K, Armstrong B M and McNeill D M 2014 Appl. Phys. Lett. 104 012102
[6]	Nishimura T, Kita K and Toriumi A 2008 Appl. Phys. Express 1 051406
[7]	Kobayashi M, Kinoshita A, Saraswat K, Wong H S P and Nishi Y 2009 J. Appl. Phys. 105 023702
[8]	Liu H H, Wang P, Qi D F, Li X, Han X, Wang C, Chen S Y, Li C and Huang W 2014 Appl. Phys. Lett. 105 192103
[9]	Ikeda K, Yamashita Y, Sugiyama N, Taoka N and Takagi S I 2006 Appl. Phys. Lett. 88 152115
[10]	Tong Y, Liu B, Lim P S Y and Yeo Y C 2012 Electron Dev. Lett. 33 773
[11]	Koike M, Kamimuta Y and Tezuka T 2011 Appl. Phys. Express 4 021301
[12]	Wu H D, Huang W, Lu W F, Tang R F, Li C, Lai H K, Chen S Y and Xue C L 2013 Appl. Surf. Sci. 284 877
[13]	Wu Z, Huang W, Li C, Lai H K and Chen S Y 2012 IEEE Trans. Electron Dev. 59 1328
[14]	ICDD card No. 025-1257
[15]	Addonizio M L, Castaldo A, Antonaia A, Gambale E and Iemmo L 2012 J. Vac. Sci. Technol. A 30 031506
[16]	Jiang P C, Lai Y S and Chen J S 2006 Appl. Phys. Lett. 89 122107
[17]	Nishimura T, Kita K and Toriumi A 2007 Appl. Phys. Lett. 91 123123
[18]	Zhou Y, Han W, Wang Y, Xiu F, Zou J, Kawakami R and Wang K 2010 Appl. Phys. Lett. 96 102103
[19]	Wu H D, Wang C, Wei J B, Huang W, Li C, Lai H K, Li J, Liu C L and Chen S Y 2014 IEEE Electron Device Lett. 35 1188

Modulation of WN_x/Ge Schottky barrier height by varying N composition of tungsten nitride

Modulation of WN_x/Ge Schottky barrier height by varying N composition of tungsten nitride

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 19

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Shuai Han(韩帅), Shuai Duan(段帅), Yun-Xian Liu(刘云仙), Chao Wang(王超), Xin Chen(陈欣), Hai-Rui Sun(孙海瑞), and Xiao-Bing Liu(刘晓兵). Pressure-induced stable structures and physical properties of Sr-Ge system[J]. 中国物理B, 2023, 32(1): 16101-016101.
[2]	Chen Wang(王尘), Wei-Hang Fan(范伟航), Yi-Hong Xu(许怡红), Yu-Chao Zhang(张宇超), Hui-Chen Fan(范慧晨), Cheng Li(李成), and Song-Yan Cheng(陈松岩). Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing[J]. 中国物理B, 2022, 31(9): 98503-098503.
[3]	魏佳男, 贺朝会, 李培, 李永宏, 郭红霞. Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor[J]. 中国物理B, 2019, 28(7): 76106-076106.
[4]	章航程, 陈成克, 梅盈爽, 李晓, 蒋梅燕, 胡晓君. Micron-sized diamond particles containing Ge-V and Si-V color centers[J]. 中国物理B, 2019, 28(7): 76103-076103.
[5]	郭辉, 王雪艳, 包德亮, 路红亮, 张余洋, 李更, 王业亮, 杜世萱, 高鸿钧. Fabrication of large-scale graphene/2D-germanium heterostructure by intercalation[J]. 中国物理B, 2019, 28(7): 78103-078103.
[6]	魏佳男, 贺朝会, 李培, 李永宏. Research on SEE mitigation techniques using back junction and p⁺ buffer layer in domestic non-DTI SiGe HBTs by TCAD[J]. 中国物理B, 2019, 28(6): 68503-068503.
[7]	李培, 刘默寒, 贺朝会, 郭红霞, 张晋新, 马婷. An investigation of ionizing radiation damage in different SiGe processes[J]. 中国物理B, 2017, 26(8): 88503-088503.
[8]	黄诗浩, 李成, 陈城钊, 王尘, 谢文明, 林抒毅, 邵明, 聂明星, 陈彩云. Properties of n-Ge epilayer on Si substrate with in-situ doping technology[J]. 中国物理B, 2016, 25(6): 66601-066601.
[9]	丛慧, 薛春来, 刘智, 李传波, 步成文, 王启明. High-speed waveguide-integrated Ge/Si avalanche photodetector[J]. 中国物理B, 2016, 25(5): 58503-058503.
[10]	黄巍, 陆超, 余珏, 魏江镔, 陈超文, 汪建元, 徐剑芳, 王尘, 李成, 陈松岩, 刘春莉, 赖虹凯. High-performance germanium n⁺/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature[J]. 中国物理B, 2016, 25(5): 57304-057304.
[11]	郑晓虎, 张苗, 黄安平, 肖志松, 朱剑豪, 王曦, 狄增峰. Pattern transition from nanohoneycomb to nanograss on germanium by gallium ion bombardment[J]. 中国物理B, 2015, 24(5): 56801-056801.
[12]	李冲, 薛春来, 李亚明, 李传波, 成步文, 王启明. High performance silicon waveguide germanium photodetector[J]. 中国物理B, 2015, 24(3): 38502-038502.
[13]	洪文婷, 韩伟华, 吕奇峰, 王昊, 杨富华. Fermi level pinning effects at gate-dielectric interfaces influenced by interface state densities[J]. 中国物理B, 2015, 24(10): 107306-107306.
[14]	陈晓波, 李崧, 丁贤林, 杨小冬, 刘泉林, 高燕, 孙萍, 杨国建. Concentration effect of the near-infrared quantum cutting of 1788-nm luminescence of Tm³⁺ ion in (Y_1-xTm_x)₃Al₅O₁₂ powder phosphor[J]. 中国物理B, 2014, 23(8): 87809-087809.
[15]	李冲, 薛春来, 刘智, 成步文, 李传波, 王启明. Zero-bias high-responsivity high-bandwidth top-illuminated germanium p–i–n photodetectors[J]. 中国物理B, 2014, 23(3): 38506-038506.