Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer

doi:10.1088/1674-1056/28/4/047302

中国物理B ›› 2019, Vol. 28 ›› Issue (4): 47302-047302.doi: 10.1088/1674-1056/28/4/047302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer

Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Xiao-Can Peng(彭晓灿)

School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401, China

收稿日期:2018-11-28 修回日期:2019-02-03 出版日期:2019-04-05 发布日期:2019-04-05
通讯作者: Hong-Dong Zhao E-mail:zhaohd@hebut.edu.cn
基金资助:
Project supported by the Foundation Project of the Science and Technology on Electro-Optical Information Security Control Laboratory, China (Grant No. 614210701041705)

Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer

Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Xiao-Can Peng(彭晓灿)

School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401, China

Received:2018-11-28 Revised:2019-02-03 Online:2019-04-05 Published:2019-04-05
Contact: Hong-Dong Zhao E-mail:zhaohd@hebut.edu.cn
Supported by:
Project supported by the Foundation Project of the Science and Technology on Electro-Optical Information Security Control Laboratory, China (Grant No. 614210701041705)

摘要/Abstract

摘要：

Using the semi-insulating property and small lattice constant a of wurtzite BGaN alloy, we propose a BGaN buffer with a B-content of 1% to enhance two-dimensional electron gas (2DEG) confinement in a short-gate AlGaN/GaN high-electron mobility transistor (HEMT). Based on the two-dimensional TCAD simulation, the direct current (DC) and radio frequency (RF) characteristics of the AlGaN/GaN/B_0.01Ga_0.99N structure HEMTs are theoretically studied. Our results show that the BGaN buffer device achieves good pinch-off quality and improves RF performance compared with GaN buffer device. The BGaN buffer device can allow a good immunity to shift of threshold voltage for the aspect ratio (L_G/d) down to 6, which is much lower than that the GaN buffer device with L_G/d=11 can reach. Furthermore, due to a similar manner of enhancing 2DEG confinement, the B_0.01Ga_0.99N buffer device has similar DC and RF characteristics to those the AlGaN buffer device possesses, and its ability to control short-channel effects (SCEs) is comparable to that of an Al_0.03Ga_0.97N buffer. Therefore, this BGaN buffer with very small B-content promises to be a new method to suppress SCEs in GaN HEMTs.

关键词: AlGaN/GaN HEMT, BGaN, back barrier, short-channel effects (SCEs)

Abstract:

Key words: AlGaN/GaN HEMT, BGaN, back barrier, short-channel effects (SCEs)

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

85.30.Tv (Field effect devices) 85.30.De (Semiconductor-device characterization, design, and modeling)

韩铁成, 赵红东, 彭晓灿. Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer[J]. 中国物理B, 2019, 28(4): 47302-047302.

Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Xiao-Can Peng(彭晓灿). Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer[J]. Chin. Phys. B, 2019, 28(4): 47302-047302.

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Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer

Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer

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